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EDA-ModelleEasyEDA
Nexperia PMZB390UNEYL
| Hersteller | |
| Herst.-Teilenr. | PMZB390UNEYL |
| LCSC-Nr. | C547296 |
| Verp. | SOT-883-3 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 30V 0.9A SOT-883-3 |
| Datenblatt | Nexperia PMZB390UNEYL |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Nexperia | |
| Verp. | SOT-883-3 | |
| Output Capacitance(Coss) | 6pF | |
| Pd - Power Dissipation | 350mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 900mA | |
| Gate Threshold Voltage (Vgs(th)) | 950mV | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 470mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 41pF | |
| Gate Charge(Qg) | 1.3nC@4.5V | |
| Vgs | ±8V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Nexperia | |
| Verp. | SOT-883-3 | |
| Output Capacitance(Coss) | 6pF | |
| Pd - Power Dissipation | 350mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 900mA |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 950mV | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 470mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 41pF | |
| Gate Charge(Qg) | 1.3nC@4.5V | |
| Vgs | ±8V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Merkmale
KI-Übersetzung
- Very fast switching
- Low threshold voltage
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection: 2 kV HBM
- Ultra thin package profile of 0.37 mm
Anwendungen
KI-Übersetzung
- Relay driver
- High-speed line driver
- Low-side loadswitch
- Switching circuits
Nicht vorrätig
Benachrichtigen
Minimum: 5Vielfaches: 5Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 5+ | $ 0.1191 | $ 0.60 |
| 50+ | $ 0.0944 | $ 4.72 |
| 150+ | $ 0.0821 | $ 12.32 |
| 500+ | $ 0.0728 | $ 36.40 |
| 2,500+ | $ 0.0654 | $ 163.50 |
| 5,000+ | $ 0.0617 | $ 308.50 |
Standardgehäuse10000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Nexperia | |
| Verp. | SOT-883-3 | |
| Output Capacitance(Coss) | 6pF | |
| Pd - Power Dissipation | 350mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 900mA | |
| Gate Threshold Voltage (Vgs(th)) | 950mV | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 470mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 41pF | |
| Gate Charge(Qg) | 1.3nC@4.5V | |
| Vgs | ±8V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Nexperia | |
| Verp. | SOT-883-3 | |
| Output Capacitance(Coss) | 6pF | |
| Pd - Power Dissipation | 350mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 900mA |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 950mV | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 470mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 41pF | |
| Gate Charge(Qg) | 1.3nC@4.5V | |
| Vgs | ±8V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Merkmale
KI-Übersetzung
- Very fast switching
- Low threshold voltage
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection: 2 kV HBM
- Ultra thin package profile of 0.37 mm
Anwendungen
KI-Übersetzung
- Relay driver
- High-speed line driver
- Low-side loadswitch
- Switching circuits
C547296 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| DMN3730UFB4-7 | DIODES | X2-DFN1006-3 | 625 | $ 0.1602 | ||
| DMN3731UFB4-7B | DIODES | X2-DFN1006-3 | 30 | $ 0.0709 | ||
| DMN3730UFB4-7B | DIODES | X2-DFN1006-3 | 20 | $ 0.4598 | ||
| PMZ390UNEYL | Nexperia | SOT-883 | 0 | $ 0.9141 | ||
| CEDM7004 TR PBFREE | Central | SOT-883 | 0 | $ 0.0775 | ||
| PMZB200UNEYL | Nexperia | SOT-883-3 | 0 | $ 0.1078 | ||
| PMZ390UN,315 | Nexperia | SOT-883 | 0 | $ 0.1881 | ||
| CEDM7004 BK PBFREE | Central | SOT-883 | 0 | $ 0.5826 | ||
| DMN3730UFB-7 | DIODES | X1-DFN1006-3 | 0 | $ 0.2005 | ||
| DMN3061LCA3-7 | DIODES | X4-DSN1006-3 | 0 | $ 0.3035 |