UMW MMBT5551
| Hersteller | UMWAsian Brands |
| Herst.-Teilenr. | MMBT5551 |
| LCSC-Nr. | C545553 |
| Verp. | SOT-23 |
| Kundennummer | |
| Hauptmerkm. | TRANS NPN 160V 600mA SOT-23 |
| Datenblatt | UMW MMBT5551 |
| RoHS-Konformität | 2 Dokumente verfügbar |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | UMW | |
| Verp. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 50nA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 160V | |
| Emitter-Base Voltage VEBO | 6V | |
| DC Current Gain | 80 | |
| Pd - Power Dissipation | 300mW | |
| Current - Collector(Ic) | 600mA | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 150mV |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | UMW | |
| Verp. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 50nA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 160V |
| Typ | Beschreibung | |
|---|---|---|
| Emitter-Base Voltage VEBO | 6V | |
| DC Current Gain | 80 | |
| Pd - Power Dissipation | 300mW | |
| Current - Collector(Ic) | 600mA | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 150mV |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Complementary to MMBT5401
- Ideal for Medium Power Amplification and Switching
Vorrätig: 6,750
6,750 Ab Lager, sofort versandfertig
Minimum: 50Vielfaches: 50Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 50+ | $ 0.0146 | $ 0.73 |
| 500+ | $ 0.0115 | $ 5.75 |
| 3,000+ | $ 0.0086 | $ 25.80 |
| 6,000+ | $ 0.0076 | $ 45.60 |
| 24,000+ | $ 0.0067 | $ 160.80 |
| 51,000+ | $ 0.0062 | $ 316.20 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | UMW | |
| Verp. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 50nA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 160V | |
| Emitter-Base Voltage VEBO | 6V | |
| DC Current Gain | 80 | |
| Pd - Power Dissipation | 300mW | |
| Current - Collector(Ic) | 600mA | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 150mV |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | UMW | |
| Verp. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 50nA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 160V |
| Typ | Beschreibung | |
|---|---|---|
| Emitter-Base Voltage VEBO | 6V | |
| DC Current Gain | 80 | |
| Pd - Power Dissipation | 300mW | |
| Current - Collector(Ic) | 600mA | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 150mV |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Complementary to MMBT5401
- Ideal for Medium Power Amplification and Switching
C545553 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Typ | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
