Infineon FD650R17IE4
| Hersteller | |
| Herst.-Teilenr. | FD650R17IE4 |
| LCSC-Nr. | C540900 |
| Verp. | - |
| Kundennummer | |
| Hauptmerkm. | 4.15kW 650A 1.7kV IGBT Module IGBT Modules RoHS |
| Datenblatt | Infineon FD650R17IE4 |
| RoHS-Konformität | 1 Dokumente verfügbar |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Hersteller | Infineon | |
| Verp. | - | |
| Td(off) | 1us | |
| Pd - Power Dissipation | 4.15kW | |
| Td(on) | 550ns | |
| Current - Collector(Ic) | 650A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.7kV | |
| Reverse Transfer Capacitance (Cres) | 1.7nF | |
| IGBT Type | IGBT Module | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V | |
| Gate Charge(Qg) | 7uC | |
| Vce Saturation(VCE(sat)) | 2.45V | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 140mJ | |
| Turn-On Energy (Eon) | 205mJ | |
| Operating Temperature | -40℃~+150℃ | |
| Input Capacitance(Cies) | 54nF | |
| Output Capacitance(Coes) | - |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Hersteller | Infineon | |
| Verp. | - | |
| Td(off) | 1us | |
| Pd - Power Dissipation | 4.15kW | |
| Td(on) | 550ns | |
| Current - Collector(Ic) | 650A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.7kV | |
| Reverse Transfer Capacitance (Cres) | 1.7nF | |
| IGBT Type | IGBT Module |
| Typ | Beschreibung | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V | |
| Gate Charge(Qg) | 7uC | |
| Vce Saturation(VCE(sat)) | 2.45V | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 140mJ | |
| Turn-On Energy (Eon) | 205mJ | |
| Operating Temperature | -40℃~+150℃ | |
| Input Capacitance(Cies) | 54nF | |
| Output Capacitance(Coes) | - |
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| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 451.4752 | $ 451.48 |
| 30+ | $ 429.8702 | $ 12896.11 |
Standardgehäuse3/Full Tray | ||
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Hersteller | Infineon | |
| Verp. | - | |
| Td(off) | 1us | |
| Pd - Power Dissipation | 4.15kW | |
| Td(on) | 550ns | |
| Current - Collector(Ic) | 650A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.7kV | |
| Reverse Transfer Capacitance (Cres) | 1.7nF | |
| IGBT Type | IGBT Module | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V | |
| Gate Charge(Qg) | 7uC | |
| Vce Saturation(VCE(sat)) | 2.45V | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 140mJ | |
| Turn-On Energy (Eon) | 205mJ | |
| Operating Temperature | -40℃~+150℃ | |
| Input Capacitance(Cies) | 54nF | |
| Output Capacitance(Coes) | - |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Hersteller | Infineon | |
| Verp. | - | |
| Td(off) | 1us | |
| Pd - Power Dissipation | 4.15kW | |
| Td(on) | 550ns | |
| Current - Collector(Ic) | 650A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.7kV | |
| Reverse Transfer Capacitance (Cres) | 1.7nF | |
| IGBT Type | IGBT Module |
| Typ | Beschreibung | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V | |
| Gate Charge(Qg) | 7uC | |
| Vce Saturation(VCE(sat)) | 2.45V | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 140mJ | |
| Turn-On Energy (Eon) | 205mJ | |
| Operating Temperature | -40℃~+150℃ | |
| Input Capacitance(Cies) | 54nF | |
| Output Capacitance(Coes) | - |
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Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |

