Infineon IRFU2405PBF
| Produttore | |
| Cod. Prod. | IRFU2405PBF |
| Cod. LCSC | C538062 |
| Imballo | IPAK |
| Numero Cliente | |
| Attr. chiave | 55V 56A 4V 110W 11.8mΩ@10V 1 N-channel IPAK Single FETs, MOSFETs |
| Scheda Tecnica | Infineon IRFU2405PBF |
| Parti alternative | 10 |
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | IPAK | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 56A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 110W | |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF | |
| RDS(on) | 11.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.43nF | |
| Gate Charge(Qg) | 70nC@10V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | IPAK | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 56A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 110W | |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF | |
| RDS(on) | 11.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.43nF | |
| Gate Charge(Qg) | 70nC@10V |
Descrizione
The 7th Generation HEXFET Power MOSFETs utilize advanced processing technology to achieve extremely low on-resistance per unit silicon area. This advantage, combined with the well-known fast switching speed and rugged device design of HEXFET Power MOSFETs, provides designers with an extremely efficient and reliable device suitable for a wide range of applications. The D-Pak package is designed for SMT using vapor phase, infrared, or wave soldering techniques. The straight-lead version (IRFU series) is suitable for through-hole mounting applications. In typical surface mount applications, power dissipation levels of up to 1.5 watts can be achieved.
Caratteristiche
- Advanced process technology
- Dynamic dv/dt rated
- Fast switching
- Fully avalanche rated
- Lead-free
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 0.9656 | $ 0.97 |
| 200+ | $ 0.3742 | $ 74.84 |
| 500+ | $ 0.3615 | $ 180.75 |
| 1,000+ | $ 0.3552 | $ 355.20 |
Package Standard3000/Full Tube | ||
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | IPAK | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 56A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 110W | |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF | |
| RDS(on) | 11.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.43nF | |
| Gate Charge(Qg) | 70nC@10V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | IPAK | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 56A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 110W | |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF | |
| RDS(on) | 11.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.43nF | |
| Gate Charge(Qg) | 70nC@10V |
Descrizione
The 7th Generation HEXFET Power MOSFETs utilize advanced processing technology to achieve extremely low on-resistance per unit silicon area. This advantage, combined with the well-known fast switching speed and rugged device design of HEXFET Power MOSFETs, provides designers with an extremely efficient and reliable device suitable for a wide range of applications. The D-Pak package is designed for SMT using vapor phase, infrared, or wave soldering techniques. The straight-lead version (IRFU series) is suitable for through-hole mounting applications. In typical surface mount applications, power dissipation levels of up to 1.5 watts can be achieved.
Caratteristiche
- Advanced process technology
- Dynamic dv/dt rated
- Fast switching
- Fully avalanche rated
- Lead-free
C538062 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
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|---|---|---|---|---|---|---|
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