Infineon IRF6724MTRPBF

The IRF6724MPbF combines the latest HEXFET power MOSFET silicon technology with the advanced DirectFET package to achieve the lowest on-resistance in a package with SO-8 footprint and only 0.7 mm height. When following the manufacturing methods and processes described in Application Note AN-1035, the DirectFET package is compatible with existing layout geometries, PCB assembly equipment, and vapor phase, infrared, or convection soldering techniques used in power applications. The DirectFET package supports dual-side cooling to maximize thermal transfer efficiency in power systems, reducing thermal resistance by 80% compared to the previous best. The IRF6724MPbF balances low resistance and low charge while featuring ultra-low package inductance to reduce conduction and switching losses. The reduction in total losses makes this product ideal for high-efficiency DC-DC converters powering the next generation of processors operating at high frequencies. The IRF6724MPbF is optimized for parameters critical in synchronous buck applications, including on-resistance Rds(on), gate charge, and Cdv/dt-induced turn-on immunity. For synchronous FET applications, the IRF6724MPbF offers particularly low Rds(on) and high Cdv/dt immunity.

• RoHS compliant and halogen-free
• Low profile (< 0.7 mm)
• Dual-sided cooling support
• Ultra-low package inductance
• Optimized for high-frequency switching
• Low conduction and switching losses
• Compatible with existing SMT processes
• 100% Rg tested

• CPU core DC-DC converter – synchronous FET slot for synchronous buck converter