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EDA-ModelleEasyEDA
Infineon IPW60R099P7
| Hersteller | |
| Herst.-Teilenr. | IPW60R099P7 |
| LCSC-Nr. | C537464 |
| Verp. | TO-247-3 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 20A TO-247-3 |
| Datenblatt | Infineon IPW60R099P7 |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-247-3 | |
| Output Capacitance(Coss) | 33pF | |
| Pd - Power Dissipation | 117W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 99mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.952nF | |
| Gate Charge(Qg) | 45nC@400V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-247-3 | |
| Output Capacitance(Coss) | 33pF | |
| Pd - Power Dissipation | 117W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 20A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 99mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.952nF | |
| Gate Charge(Qg) | 45nC@400V | |
| Vgs | ±20V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. The 600V CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching applications even more efficient, more compact and much cooler.
Merkmale
KI-Übersetzung
- Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness
- Significant reduction of switching and conduction losses
- Excellent ESD robustness ~2kV (HBM) for all products
- Better RDS(on)/package products compared to competition enabled by a low Ros(on)A (below 1Ohmmm²)
- Fully qualified acc. JEDEC for Industrial Applications
Anwendungen
KI-Übersetzung
- PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS.
Vorrätig: 2,445
2,445 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 4.1921 | $ 4.19 |
| 10+ | $ 3.6956 | $ 36.96 |
| 30+ | $ 3.0187 | $ 90.56 |
| 90+ | $ 2.7205 | $ 244.85 |
| 510+ | $ 2.5828 | $ 1317.23 |
| 990+ | $ 2.5205 | $ 2495.30 |
Standardgehäuse30/Full Tube | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-247-3 | |
| Output Capacitance(Coss) | 33pF | |
| Pd - Power Dissipation | 117W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 99mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.952nF | |
| Gate Charge(Qg) | 45nC@400V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-247-3 | |
| Output Capacitance(Coss) | 33pF | |
| Pd - Power Dissipation | 117W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 20A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 99mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.952nF | |
| Gate Charge(Qg) | 45nC@400V | |
| Vgs | ±20V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. The 600V CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching applications even more efficient, more compact and much cooler.
Merkmale
KI-Übersetzung
- Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness
- Significant reduction of switching and conduction losses
- Excellent ESD robustness ~2kV (HBM) for all products
- Better RDS(on)/package products compared to competition enabled by a low Ros(on)A (below 1Ohmmm²)
- Fully qualified acc. JEDEC for Industrial Applications
Anwendungen
KI-Übersetzung
- PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS.
C537464 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| IPW65R095C7 | Infineon | TO-247 | 1 | $ 11.8855 | ||
| RSF60R099W | REASUNOS | TO-247 | 49 | $1.7931 $1.8874 | ||
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| MS24N80HCC0 | MASPOWER | TO-247 | 30 | $ 3.2224 | ||
| WTM20N65AMP | WPMtek | TO-247 | 20 | $ 1.8588 | ||
| IPW65R115CFD7AXKSA1 | Infineon | TO-247-3-41 | 20 | $ 6.5911 | ||
| IPW65R099C6 | Infineon | TO-247 | 2 | $ 11.285 | ||
| MS39N100ICC0 | MASPOWER | TO-247 | 30 | $ 5.4463 | ||
| IPW60R080P7 | Infineon | TO-247-3 | 0 | $ 17.2909 | ||
| IPW65R110CFD7XKSA1 | Infineon | TO-247-3 | 0 | $ 22.6798 |