Infineon IPL65R1K0C6S
| Produttore | |
| Cod. Prod. | IPL65R1K0C6S |
| Cod. LCSC | C537046 |
| Imballo | TSON-8-EP(5x6) |
| Numero Cliente | |
| Attr. chiave | 700V 2.7A 3.5V 34.7W 1Ω@10V 1 N-channel TSON-8-EP(5x6) Single FETs, MOSFETs RoHS |
| Scheda Tecnica | Infineon IPL65R1K0C6S |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 6 |
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | TSON-8-EP(5x6) | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 700V | |
| Current - Continuous Drain(Id) | 2.7A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 34.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 328pF | |
| Gate Charge(Qg) | 15nC@10V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | TSON-8-EP(5x6) | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 700V | |
| Current - Continuous Drain(Id) | 2.7A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 34.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 328pF | |
| Gate Charge(Qg) | 15nC@10V |
Descrizione
CoolMOS is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. The CoolMOS C6 series combines the experience of leading SJ MOSFET suppliers with outstanding innovation. The offered devices deliver all the advantages of fast-switching SJ MOSFETs without compromising ease of use. Extremely low switching and conduction losses enable switching applications to be more efficient, compact, lightweight, and thermally optimized.
Caratteristiche
- Ultra-low FOM (Rdson*Qg and Eoss) for minimal switching losses
- Exceptionally high commutation robustness
- Easy to use/drive
- Lead-free plating, halogen-free molding compound
- Compliant with JEDEC (J-STD20 and JESD22) standards for industrial-grade applications
Applicazioni
- PFC stage, hard-switching PWM stage, and resonant-switching PWM stage for applications such as PC hosts, adapters, LCD and plasma TVs, lighting, servers, telecommunications, and UPS.
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 1.5062 | $ 1.51 |
| 200+ | $ 0.5835 | $ 116.70 |
| 500+ | $ 0.5629 | $ 281.45 |
| 1,000+ | $ 0.5534 | $ 553.40 |
Package Standard5000/Full Reel | ||
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | TSON-8-EP(5x6) | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 700V | |
| Current - Continuous Drain(Id) | 2.7A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 34.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 328pF | |
| Gate Charge(Qg) | 15nC@10V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | TSON-8-EP(5x6) | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 700V | |
| Current - Continuous Drain(Id) | 2.7A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 34.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 328pF | |
| Gate Charge(Qg) | 15nC@10V |
Descrizione
CoolMOS is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. The CoolMOS C6 series combines the experience of leading SJ MOSFET suppliers with outstanding innovation. The offered devices deliver all the advantages of fast-switching SJ MOSFETs without compromising ease of use. Extremely low switching and conduction losses enable switching applications to be more efficient, compact, lightweight, and thermally optimized.
Caratteristiche
- Ultra-low FOM (Rdson*Qg and Eoss) for minimal switching losses
- Exceptionally high commutation robustness
- Easy to use/drive
- Lead-free plating, halogen-free molding compound
- Compliant with JEDEC (J-STD20 and JESD22) standards for industrial-grade applications
Applicazioni
- PFC stage, hard-switching PWM stage, and resonant-switching PWM stage for applications such as PC hosts, adapters, LCD and plasma TVs, lighting, servers, telecommunications, and UPS.
C537046 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| CMSA6N70 | Cmos | DFN-8(5x6) | 3 | $0.3210 $0.3378 | ||
| DON4N65S | DOINGTER | DFN5x6-8 | 4,990 | $ 0.2504 | ||
| TPG70R600M | WUXI UNIGROUP MICRO | PDFN-8(5x6) | 0 | $ 0.7295 | ||
| AONS1R6A70 | AOS | DFN-8-EP(5x6) | 0 | $ 0.645 | ||
| AONS660A70F | AOS | DFN-8-EP(5x6) | 0 | $ 2.149 | ||
| SIHJ6N65E-T1-GE3 | VISHAY | PowerPAKSO-8 | 0 | $ 2.4936 |

