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Infineon IPL60R065P7
| 제조업체 | |
| 제조사 품번 | IPL60R065P7 |
| LCSC 번호 | C537016 |
| 포장 | VSON-4-EP(8.1x8.1) |
| 고객 번호 | |
| 주요 제원 | MOSFET N-CH 650V 32A VSON-4-EP(8.1x8.1) |
| 데이터시트 | Infineon IPL60R065P7 |
| RoHS 준수 | 1개 문서 이용 가능 |
| 대체 부품 | 3 |
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | Infineon | |
| 포장 | VSON-4-EP(8.1x8.1) | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 32A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 201W | |
| Reverse Transfer Capacitance (Crss@Vds) | 924pF | |
| RDS(on) | 65mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.895nF | |
| Gate Charge(Qg) | 67nC@10V |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | Infineon | |
| 포장 | VSON-4-EP(8.1x8.1) | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 32A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| 타입 | 설명 | |
|---|---|---|
| Pd - Power Dissipation | 201W | |
| Reverse Transfer Capacitance (Crss@Vds) | 924pF | |
| RDS(on) | 65mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.895nF | |
| Gate Charge(Qg) | 67nC@10V |
개요
The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching applications even more efficient, more compact and much cooler.
주요 특징
- Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness
- Significant reduction of switching and conduction losses
- Excellent ESD robustness (HBM) for all products
- Better RDS(on)/package products compared to competition enabled by a low RDS(on)A (below 1Ohmmm²)
- Fully qualified acc. JEDEC for Industrial Applications
응용 분야
- PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS.
| 수량 | 단가(참고용) | 총액 |
|---|---|---|
| 1+ | $ 5.3093 | $ 5.31 |
| 10+ | $ 4.7651 | $ 47.65 |
| 30+ | $ 4.4401 | $ 133.20 |
| 100+ | $ 4.1136 | $ 411.36 |
| 500+ | $ 3.9625 | $ 1981.25 |
| 1,000+ | $ 3.8943 | $ 3894.30 |
표준 패키지3000/Full Reel | ||
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | Infineon | |
| 포장 | VSON-4-EP(8.1x8.1) | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 32A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 201W | |
| Reverse Transfer Capacitance (Crss@Vds) | 924pF | |
| RDS(on) | 65mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.895nF | |
| Gate Charge(Qg) | 67nC@10V |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | Infineon | |
| 포장 | VSON-4-EP(8.1x8.1) | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 32A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| 타입 | 설명 | |
|---|---|---|
| Pd - Power Dissipation | 201W | |
| Reverse Transfer Capacitance (Crss@Vds) | 924pF | |
| RDS(on) | 65mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.895nF | |
| Gate Charge(Qg) | 67nC@10V |
개요
The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching applications even more efficient, more compact and much cooler.
주요 특징
- Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness
- Significant reduction of switching and conduction losses
- Excellent ESD robustness (HBM) for all products
- Better RDS(on)/package products compared to competition enabled by a low RDS(on)A (below 1Ohmmm²)
- Fully qualified acc. JEDEC for Industrial Applications
응용 분야
- PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS.
C537016 EasyEDA 라이브러리
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
대체 부품
| MPN | 제조사 | 포장 | 재고 현황 | 단가 | ||
|---|---|---|---|---|---|---|
| IPL60R065C7 | Infineon | VSON-4-EP(8.1x8.1) | 20 | $ 8.6528 | ||
| IPL60R185P7 | Infineon | VSON-4-EP(8.1x8.1) | 17 | $ 1.8879 | ||
| IPL60R125C7 | Infineon | VSON-4-EP(8.1x8.1) | 4 | $ 4.1266 |