- Rozmieszczenie wyprowadzeń
- Footprint
Zdjęcia poglądowe
Modele EDAEasyEDA
Nexperia PXP015-30QLJ
| Producent | |
| Nr części prod. | PXP015-30QLJ |
| Nr LCSC | C5359160 |
| Opak. | MLPAK33 |
| Numer Klienta | |
| Klucz. cechy | 30V 12.8A 1.6V 4.2W 15.8mΩ@10V 1 P-Channel MLPAK33 Single FETs, MOSFETs RoHS |
| Karta Katalogowa | Nexperia PXP015-30QLJ |
| Zgodność z RoHS | 1 dokumentów dostępnych |
| Części alternatywne | 10 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Nexperia | |
| Opak. | MLPAK33 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 12.8A | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 4.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF | |
| RDS(on) | 15.8mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.2nF | |
| Gate Charge(Qg) | 36.9nC@10V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Nexperia | |
| Opak. | MLPAK33 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 12.8A | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 4.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF | |
| RDS(on) | 15.8mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.2nF | |
| Gate Charge(Qg) | 36.9nC@10V |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
P-channel enhancement-mode FET using Trench MOSFET technology, in MLPAK33 (SOT8002) SMD plastic package.
Funkcje
Tłumaczenie AI
- Logic level compatible
- Trench MOSFET technology
- MLPAK33 package (footprint 3.3 x 3.3 mm)
Zastosowania
Tłumaczenie AI
- High-side load switch
- Battery management
- DC-DC conversion
- Switching circuits
Brak w magazynie
Powiadom mnie
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 2.0357 | $ 2.04 |
| 10+ | $ 2.0178 | $ 20.18 |
| 30+ | $ 2.0065 | $ 60.20 |
| 100+ | $ 1.9951 | $ 199.51 |
Standardowa Obudowa2500/Full Reel | ||
Lepsza cena za większą ilość?
$
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Nexperia | |
| Opak. | MLPAK33 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 12.8A | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 4.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF | |
| RDS(on) | 15.8mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.2nF | |
| Gate Charge(Qg) | 36.9nC@10V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Nexperia | |
| Opak. | MLPAK33 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 12.8A | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 4.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF | |
| RDS(on) | 15.8mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.2nF | |
| Gate Charge(Qg) | 36.9nC@10V |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
P-channel enhancement-mode FET using Trench MOSFET technology, in MLPAK33 (SOT8002) SMD plastic package.
Funkcje
Tłumaczenie AI
- Logic level compatible
- Trench MOSFET technology
- MLPAK33 package (footprint 3.3 x 3.3 mm)
Zastosowania
Tłumaczenie AI
- High-side load switch
- Battery management
- DC-DC conversion
- Switching circuits
C5359160 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| PXP012-30QLJ | Nexperia | MLPAK-33 | 1 | $ 1.8332 | ||
| LWP3020AD3 | Lewa Micro | PDFN-8L(3.3x3.3) | 5,000 | $ 0.2008 | ||
| XR20P03D | XNRUSEMI | PDFN-8L(3.3x3.3) | 2,950 | $0.0956 $0.1006 | ||
| AGM60P14AP | AGMSEMI | PDFN3.3x3.3-8 | 1,670 | $ 0.3798 | ||
| XR45P03D | XNRUSEMI | PDFN-8L(3.3x3.3) | 6,830 | $0.1030 $0.1084 | ||
| LWP3025AD3 | Lewa Micro | PDFN-8L(3.3x3.3) | 4,965 | $ 0.1772 | ||
| SP30P15NJ | Siliup | DFN-8L(3.3x3.3) | 840 | $0.1498 $0.214 | ||
| PJQ4441P_R2_00001 | PANJIT | DFN3333-8L | 0 | $ 0.2002 | ||
| FDMC4435BZ-F126 | onsemi | WDFN-8(3.3x3.3) | 0 | $ 0.861 | ||
| UPA2816T1S-E2-AT | RENESAS | HWSON-8(3.3x3.3) | 0 | $ 1.4716 |