Infineon FS50R06W1E3_B11

제조업체	Infineon
제조사 품번	FS50R06W1E3_B11
LCSC 번호	C535525
포장	-
고객 번호
주요 제원	205W 50A 600V FS (Field Stop) IGBT Modules RoHS
데이터시트	Infineon FS50R06W1E3_B11
RoHS 준수	1개 문서 이용 가능

제품 사양

전체

타입	설명
카테고리	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
제조업체	Infineon
포장	-
Pd - Power Dissipation	205W
Td(off)	200ns
Td(on)	23ns
Current - Collector(Ic)	50A
Collector-Emitter Breakdown Voltage (Vces)	600V
Reverse Transfer Capacitance (Cres)	95pF
IGBT Type	FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	4.9V;6.5V
Gate Charge(Qg)	500nC
Vce Saturation(VCE(sat))	1.45V;1.9V
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	1.2mJ
Turn-On Energy (Eon)	460uJ
Operating Temperature	-40℃~+150℃
Input Capacitance(Cies)	3.1nF
Output Capacitance(Coes)	-

타입	설명
카테고리	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
제조업체	Infineon
포장	-
Pd - Power Dissipation	205W
Td(off)	200ns
Td(on)	23ns
Current - Collector(Ic)	50A
Collector-Emitter Breakdown Voltage (Vces)	600V
Reverse Transfer Capacitance (Cres)	95pF
IGBT Type	FS (Field Stop)

타입	설명
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	4.9V;6.5V
Gate Charge(Qg)	500nC
Vce Saturation(VCE(sat))	1.45V;1.9V
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	1.2mJ
Turn-On Energy (Eon)	460uJ
Operating Temperature	-40℃~+150℃
Input Capacitance(Cies)	3.1nF
Output Capacitance(Coes)	-

품절

재입고 알림

최소값: 1배수: 1판매 단위: Piece

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전체

타입	설명
카테고리	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
제조업체	Infineon
포장	-
Pd - Power Dissipation	205W
Td(off)	200ns
Td(on)	23ns
Current - Collector(Ic)	50A
Collector-Emitter Breakdown Voltage (Vces)	600V
Reverse Transfer Capacitance (Cres)	95pF
IGBT Type	FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	4.9V;6.5V
Gate Charge(Qg)	500nC
Vce Saturation(VCE(sat))	1.45V;1.9V
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	1.2mJ
Turn-On Energy (Eon)	460uJ
Operating Temperature	-40℃~+150℃
Input Capacitance(Cies)	3.1nF
Output Capacitance(Coes)	-

타입	설명
카테고리	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
제조업체	Infineon
포장	-
Pd - Power Dissipation	205W
Td(off)	200ns
Td(on)	23ns
Current - Collector(Ic)	50A
Collector-Emitter Breakdown Voltage (Vces)	600V
Reverse Transfer Capacitance (Cres)	95pF
IGBT Type	FS (Field Stop)

타입	설명
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	4.9V;6.5V
Gate Charge(Qg)	500nC
Vce Saturation(VCE(sat))	1.45V;1.9V
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	1.2mJ
Turn-On Energy (Eon)	460uJ
Operating Temperature	-40℃~+150℃
Input Capacitance(Cies)	3.1nF
Output Capacitance(Coes)	-