TWGMC SS510C
| Producent | TWGMCAsian Brands |
| Nr części prod. | SS510C |
| Nr LCSC | C53464367 |
| Opak. | SMC |
| Numer Klienta | |
| Klucz. cechy | 1 Independent 100V 850mV@5A 5A SMC Single Diodes |
| Karta Katalogowa | TWGMC SS510C |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | TWGMC | |
| Opak. | SMC | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Diode Configuration | 1 Independent | |
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Voltage - Forward(Vf@If) | 850mV@5A | |
| Reverse Leakage Current (Ir) | 1mA@100V | |
| Current - Rectified | 5A | |
| Non-Repetitive Peak Forward Surge Current | 150A |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | TWGMC | |
| Opak. | SMC | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Diode Configuration | 1 Independent |
| Typ | Opis | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Voltage - Forward(Vf@If) | 850mV@5A | |
| Reverse Leakage Current (Ir) | 1mA@100V | |
| Current - Rectified | 5A | |
| Non-Repetitive Peak Forward Surge Current | 150A |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Metal-silicon junction, majority carrier conduction
- Surface mount applications
- Low power consumption, high efficiency
- High forward surge current capability
- Low voltage, high frequency inverters, freewheeling, and polarity protection applications
Na stanie: 2,920
2,920 W magazynie, wysyłka natychmiastowa
Minimum: 10Wielokrotność: 10Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 10+ | $ 0.0628 | $ 0.63 |
| 100+ | $ 0.0503 | $ 5.03 |
| 300+ | $ 0.044 | $ 13.20 |
| 3,000+ | $ 0.0394 | $ 118.20 |
| 6,000+ | $ 0.0356 | $ 213.60 |
| 9,000+ | $ 0.0337 | $ 303.30 |
Standardowa Obudowa3000/Full Reel | ||
Lepsza cena za większą ilość?
$
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | TWGMC | |
| Opak. | SMC | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Diode Configuration | 1 Independent | |
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Voltage - Forward(Vf@If) | 850mV@5A | |
| Reverse Leakage Current (Ir) | 1mA@100V | |
| Current - Rectified | 5A | |
| Non-Repetitive Peak Forward Surge Current | 150A |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | TWGMC | |
| Opak. | SMC | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Diode Configuration | 1 Independent |
| Typ | Opis | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Voltage - Forward(Vf@If) | 850mV@5A | |
| Reverse Leakage Current (Ir) | 1mA@100V | |
| Current - Rectified | 5A | |
| Non-Repetitive Peak Forward Surge Current | 150A |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Metal-silicon junction, majority carrier conduction
- Surface mount applications
- Low power consumption, high efficiency
- High forward surge current capability
- Low voltage, high frequency inverters, freewheeling, and polarity protection applications
C53464367 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |



