Infineon FP50R12KT4G

Produttore	Infineon
Cod. Prod.	FP50R12KT4G
Cod. LCSC	C534050
Imballo	-
Numero Cliente
Attr. chiave	280W 50A 1.2kV IGBT Module IGBT Modules RoHS
Scheda Tecnica	Infineon FP50R12KT4G
Conformità RoHS	1 documenti disponibili

Specifiche del Prodotto

Tutto

Tipo	Descrizione
Categoria	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
Produttore	Infineon
Imballo	-
Pd - Power Dissipation	280W
Td(off)	280ns
Td(on)	60ns
Current - Collector(Ic)	50A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	100pF
IGBT Type	IGBT Module
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	5.8V
Gate Charge(Qg)	380nC@15V
Vce Saturation(VCE(sat))	2.15V
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	2.8mJ
Turn-On Energy (Eon)	3.5mJ
Operating Temperature	-40℃~+150℃
Input Capacitance(Cies)	2.8nF
Output Capacitance(Coes)	-

Tipo	Descrizione
Categoria	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
Produttore	Infineon
Imballo	-
Pd - Power Dissipation	280W
Td(off)	280ns
Td(on)	60ns
Current - Collector(Ic)	50A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	100pF
IGBT Type	IGBT Module

Tipo	Descrizione
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	5.8V
Gate Charge(Qg)	380nC@15V
Vce Saturation(VCE(sat))	2.15V
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	2.8mJ
Turn-On Energy (Eon)	3.5mJ
Operating Temperature	-40℃~+150℃
Input Capacitance(Cies)	2.8nF
Output Capacitance(Coes)	-

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Tutto

Tipo	Descrizione
Categoria	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
Produttore	Infineon
Imballo	-
Pd - Power Dissipation	280W
Td(off)	280ns
Td(on)	60ns
Current - Collector(Ic)	50A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	100pF
IGBT Type	IGBT Module
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	5.8V
Gate Charge(Qg)	380nC@15V
Vce Saturation(VCE(sat))	2.15V
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	2.8mJ
Turn-On Energy (Eon)	3.5mJ
Operating Temperature	-40℃~+150℃
Input Capacitance(Cies)	2.8nF
Output Capacitance(Coes)	-

Tipo	Descrizione
Categoria	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
Produttore	Infineon
Imballo	-
Pd - Power Dissipation	280W
Td(off)	280ns
Td(on)	60ns
Current - Collector(Ic)	50A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	100pF
IGBT Type	IGBT Module

Tipo	Descrizione
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	5.8V
Gate Charge(Qg)	380nC@15V
Vce Saturation(VCE(sat))	2.15V
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	2.8mJ
Turn-On Energy (Eon)	3.5mJ
Operating Temperature	-40℃~+150℃
Input Capacitance(Cies)	2.8nF
Output Capacitance(Coes)	-