Abbildung ähnlich
EDA-ModelleEasyEDA
Infineon AUIRLS4030-7P
| Hersteller | |
| Herst.-Teilenr. | AUIRLS4030-7P |
| LCSC-Nr. | C533496 |
| Verp. | D2PAK-7 |
| Kundennummer | |
| Hauptmerkm. | 370W 100V 190A 2.5V 3.9mΩ@10V 1 N-channel N-Channel D2PAK-7 Single FETs, MOSFETs RoHS |
| Datenblatt | Infineon AUIRLS4030-7P |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | D2PAK-7 | |
| Output Capacitance(Coss) | 680pF | |
| Pd - Power Dissipation | 370W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 190A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 300pF | |
| RDS(on) | 3.9mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 11.49nF | |
| Gate Charge(Qg) | 140nC@4.5V | |
| Vgs | ±16V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | D2PAK-7 | |
| Output Capacitance(Coss) | 680pF | |
| Pd - Power Dissipation | 370W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 190A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 300pF | |
| RDS(on) | 3.9mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 11.49nF | |
| Gate Charge(Qg) | 140nC@4.5V | |
| Vgs | ±16V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This HEXFET power MOSFET is designed for automotive applications, utilizing the latest processing technology to achieve extremely low on-resistance per unit silicon area. Additional features of this design include a 175°C junction operating temperature, fast switching speed, and improved repetitive avalanche ratings. Combined, these characteristics make this design an extremely efficient and reliable device for automotive applications and a wide variety of other applications.
Merkmale
KI-Übersetzung
- Optimized for logic-level drive
- Advanced process technology
- Ultra-low on-resistance
- Logic-level gate drive
- 175°C operating temperature
- Fast switching
- Repetitive avalanche rated to maximum junction temperature Tjmax
- Lead-free, RoHS compliant
- AEC-Q101 qualified
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 2.0899 | $ 2.09 |
| 200+ | $ 0.8088 | $ 161.76 |
| 500+ | $ 0.781 | $ 390.50 |
| 1,000+ | $ 0.7672 | $ 767.20 |
Standardgehäuse50/Full Tube | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | D2PAK-7 | |
| Output Capacitance(Coss) | 680pF | |
| Pd - Power Dissipation | 370W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 190A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 300pF | |
| RDS(on) | 3.9mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 11.49nF | |
| Gate Charge(Qg) | 140nC@4.5V | |
| Vgs | ±16V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | D2PAK-7 | |
| Output Capacitance(Coss) | 680pF | |
| Pd - Power Dissipation | 370W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 190A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 300pF | |
| RDS(on) | 3.9mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 11.49nF | |
| Gate Charge(Qg) | 140nC@4.5V | |
| Vgs | ±16V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This HEXFET power MOSFET is designed for automotive applications, utilizing the latest processing technology to achieve extremely low on-resistance per unit silicon area. Additional features of this design include a 175°C junction operating temperature, fast switching speed, and improved repetitive avalanche ratings. Combined, these characteristics make this design an extremely efficient and reliable device for automotive applications and a wide variety of other applications.
Merkmale
KI-Übersetzung
- Optimized for logic-level drive
- Advanced process technology
- Ultra-low on-resistance
- Logic-level gate drive
- 175°C operating temperature
- Fast switching
- Repetitive avalanche rated to maximum junction temperature Tjmax
- Lead-free, RoHS compliant
- AEC-Q101 qualified
C533496 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| IPF018N10NM5LF2ATMA1 | Infineon | TO-263-7 | 6 | $ 6.2292 | ||
| IPF019N12NM6ATMA1 | Infineon | PG-TO263-7 | 39 | $ 8.0286 | ||
| CMB029N10-7 | Cmos | TO-263-7 | 790 | $1.2393 $1.3045 | ||
| IPF015N10N5ATMA1 | Infineon | TO-263-7-1 | 10 | $11.5336 $14.417 | ||
| IPB180N10S403ATMA1 | Infineon | TO-263-7-3 | 18 | $ 9.7776 | ||
| IPF026N15NM6ATMA1 | Infineon | TO-263-7 | 18 | $ 6.4009 | ||
| AUIRFS4010-7TRL | Infineon | TO-263-7 | 0 | $ 4.3696 | ||
| CI036N12 | Tokmas | TO-263-7 | 0 | $0.9224 $1.153 | ||
| IPF021N13NM6ATMA1 | Infineon | TO263-7 | 0 | $ 18.576 | ||
| NTBGS004N10G | onsemi | TO-263-7 | 0 | $ 9.9379 |