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Modelli EDAEasyEDA
Infineon AIKW50N65DH5
| Produttore | |
| Cod. Prod. | AIKW50N65DH5 |
| Cod. LCSC | C533180 |
| Imballo | TO-247-3-41 |
| Numero Cliente | |
| Attr. chiave | 650V TO-247-3-41 Single IGBTs RoHS |
| Scheda Tecnica | Infineon AIKW50N65DH5 |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 10 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | Infineon | |
| Imballo | TO-247-3-41 | |
| Pd - Power Dissipation | 270W;136W | |
| Td(off) | 173ns | |
| Td(on) | 21ns | |
| Current - Collector(Ic) | 80A;53.5A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 11pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V | |
| Operating Temperature | -40℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 1.66V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 58ns | |
| Switching Energy(Eoff) | 160uJ | |
| Turn-On Energy (Eon) | 450uJ | |
| Input Capacitance(Cies) | 3.05nF | |
| Gate Charge(Qg) | 116nC | |
| Output Capacitance(Coes) | 69pF |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | Infineon | |
| Imballo | TO-247-3-41 | |
| Pd - Power Dissipation | 270W;136W | |
| Td(off) | 173ns | |
| Td(on) | 21ns | |
| Current - Collector(Ic) | 80A;53.5A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 11pF | |
| IGBT Type | - |
| Tipo | Descrizione | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V | |
| Operating Temperature | -40℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 1.66V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 58ns | |
| Switching Energy(Eoff) | 160uJ | |
| Turn-On Energy (Eon) | 450uJ | |
| Input Capacitance(Cies) | 3.05nF | |
| Gate Charge(Qg) | 116nC | |
| Output Capacitance(Coes) | 69pF |
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Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 9.3609 | $ 9.36 |
| 240+ | $ 3.6234 | $ 869.62 |
| 480+ | $ 3.4954 | $ 1677.79 |
| 960+ | $ 3.4337 | $ 3296.35 |
Package Standard240/Full Tube | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | Infineon | |
| Imballo | TO-247-3-41 | |
| Pd - Power Dissipation | 270W;136W | |
| Td(off) | 173ns | |
| Td(on) | 21ns | |
| Current - Collector(Ic) | 80A;53.5A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 11pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V | |
| Operating Temperature | -40℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 1.66V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 58ns | |
| Switching Energy(Eoff) | 160uJ | |
| Turn-On Energy (Eon) | 450uJ | |
| Input Capacitance(Cies) | 3.05nF | |
| Gate Charge(Qg) | 116nC | |
| Output Capacitance(Coes) | 69pF |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | Infineon | |
| Imballo | TO-247-3-41 | |
| Pd - Power Dissipation | 270W;136W | |
| Td(off) | 173ns | |
| Td(on) | 21ns | |
| Current - Collector(Ic) | 80A;53.5A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 11pF | |
| IGBT Type | - |
| Tipo | Descrizione | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V | |
| Operating Temperature | -40℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 1.66V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 58ns | |
| Switching Energy(Eoff) | 160uJ | |
| Turn-On Energy (Eon) | 450uJ | |
| Input Capacitance(Cies) | 3.05nF | |
| Gate Charge(Qg) | 116nC | |
| Output Capacitance(Coes) | 69pF |
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C533180 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| AIKW50N65DF5 | Infineon | TO-247-3-41 | 14 | $ 7.7483 | ||
| IKW50N65F5 | Infineon | TO-247-3 | 725 | $ 2.9122 | ||
| IKW50N65H5 | Infineon | TO-247-3 | 523 | $ 3.8775 | ||
| IKWH50N65WR6-VB | VBsemi Elec | TO-247 | 0 | $ 6.7375 | ||
| IKWH60N65WR6-VB | VBsemi Elec | TO-247 | 0 | $ 6.7375 | ||
| STGW60V60DF-VB | VBsemi Elec | TO-247 | 0 | $ 6.7375 | ||
| IGW50N65H5AXKSA1 | Infineon | TO-247-3 | 0 | $ 9.053 | ||
| AOK40B120P1-VB | VBsemi Elec | TO-247 | 0 | $ 9.0935 | ||
| AOK40B120H1-VB | VBsemi Elec | TO-247 | 0 | $ 9.0935 | ||
| FGHL50T65SQDT | onsemi | TO-247-3LD | 0 | $ 8.388 |