Slkor PDTC114ET
| Producent | SlkorAsian Brands |
| Nr części prod. | PDTC114ET |
| Nr LCSC | C5330396 |
| Opak. | SOT-23 |
| Numer Klienta | |
| Klucz. cechy | TRANS PREBIAS NPN SOT-23 |
| Karta Katalogowa | Slkor PDTC114ET |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Producent | Slkor | |
| Opak. | SOT-23 | |
| Current - Collector Cutoff | - | |
| Collector - Emitter Voltage VCEO | - | |
| Transition frequency(fT) | 250MHz | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 30 | |
| Vce Saturation(VCE(sat)) | - | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | 300mV | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 200mW | |
| Input Voltage (VI(on)@Ic,Vce) | 3V@10mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Operating temperature | - | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Producent | Slkor | |
| Opak. | SOT-23 | |
| Current - Collector Cutoff | - | |
| Collector - Emitter Voltage VCEO | - | |
| Transition frequency(fT) | 250MHz | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 30 | |
| Vce Saturation(VCE(sat)) | - | |
| Current - Collector(Ic) | 100mA |
| Typ | Opis | |
|---|---|---|
| Output Voltage(VO(on)) | 300mV | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 200mW | |
| Input Voltage (VI(on)@Ic,Vce) | 3V@10mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Operating temperature | - | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors
- The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input
- They also have the advantage of almost completely eliminating parasitic effects
- Only the on/off conditions need to be set for operation, making device design easy
Na stanie: 1,140
1,140 W magazynie, wysyłka natychmiastowa
Minimum: 20Wielokrotność: 20Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 20+ | $ 0.0277 | $ 0.55 |
| 200+ | $ 0.0218 | $ 4.36 |
| 600+ | $ 0.0186 | $ 11.16 |
| 3,000+ | $ 0.0166 | $ 49.80 |
| 9,000+ | $ 0.0149 | $ 134.10 |
| 21,000+ | $ 0.014 | $ 294.00 |
Standardowa Obudowa3000/Full Reel | ||
Lepsza cena za większą ilość?
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Producent | Slkor | |
| Opak. | SOT-23 | |
| Current - Collector Cutoff | - | |
| Collector - Emitter Voltage VCEO | - | |
| Transition frequency(fT) | 250MHz | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 30 | |
| Vce Saturation(VCE(sat)) | - | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | 300mV | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 200mW | |
| Input Voltage (VI(on)@Ic,Vce) | 3V@10mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Operating temperature | - | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Producent | Slkor | |
| Opak. | SOT-23 | |
| Current - Collector Cutoff | - | |
| Collector - Emitter Voltage VCEO | - | |
| Transition frequency(fT) | 250MHz | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 30 | |
| Vce Saturation(VCE(sat)) | - | |
| Current - Collector(Ic) | 100mA |
| Typ | Opis | |
|---|---|---|
| Output Voltage(VO(on)) | 300mV | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 200mW | |
| Input Voltage (VI(on)@Ic,Vce) | 3V@10mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Operating temperature | - | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors
- The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input
- They also have the advantage of almost completely eliminating parasitic effects
- Only the on/off conditions need to be set for operation, making device design easy
C5330396 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |



