- Pinout
- Footprint
Immagini a scopo illustrativo
Modelli EDAEasyEDA
UTC 4N65KG-TC-TN3-R
| Produttore | UTCAsian Brands |
| Cod. Prod. | 4N65KG-TC-TN3-R |
| Cod. LCSC | C5247264 |
| Imballo | TO-252 |
| Numero Cliente | |
| Attr. chiave | MOSFET N-CH 650V 4A TO-252 |
| Scheda Tecnica | UTC 4N65KG-TC-TN3-R |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 10 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | UTC | |
| Imballo | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 4A | |
| Output Capacitance(Coss) | 53.8pF | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| RDS(on) | 2.2Ω@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.2pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 600pF | |
| Gate Charge(Qg) | 13nC@10V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | UTC | |
| Imballo | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 4A | |
| Output Capacitance(Coss) | 53.8pF |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| RDS(on) | 2.2Ω@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.2pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 600pF | |
| Gate Charge(Qg) | 13nC@10V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
The UTC 4N65K-TC is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications including power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.
Caratteristiche
Traduzione AI
- RDS(ON) ≤ 2.5Ω @ VGS = 10V, ID = 2.0A
- Fast Switching Capability
- Avalanche Energy Specified
- Improved dv/dt Capability, High Ruggedness
Applicazioni
Traduzione AI
- power supplies
- PWM motor controls
- high efficient AC to DC converters
- bridge circuits
Disponibile: 140
140 Pronta consegna
Minimo: 5Multiplo: 5Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 5+ | $ 0.2579 | $ 1.29 |
| 50+ | $ 0.2047 | $ 10.24 |
| 150+ | $ 0.1819 | $ 27.29 |
| 500+ | $ 0.1535 | $ 76.75 |
| 2,500+ | $ 0.1408 | $ 352.00 |
| 5,000+ | $ 0.1332 | $ 666.00 |
Package Standard2500/Full Reel | ||
Prezzo migliore per quantità maggiore?
$
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | UTC | |
| Imballo | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 4A | |
| Output Capacitance(Coss) | 53.8pF | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| RDS(on) | 2.2Ω@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.2pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 600pF | |
| Gate Charge(Qg) | 13nC@10V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | UTC | |
| Imballo | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 4A | |
| Output Capacitance(Coss) | 53.8pF |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| RDS(on) | 2.2Ω@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.2pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 600pF | |
| Gate Charge(Qg) | 13nC@10V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
The UTC 4N65K-TC is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications including power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.
Caratteristiche
Traduzione AI
- RDS(ON) ≤ 2.5Ω @ VGS = 10V, ID = 2.0A
- Fast Switching Capability
- Avalanche Energy Specified
- Improved dv/dt Capability, High Ruggedness
Applicazioni
Traduzione AI
- power supplies
- PWM motor controls
- high efficient AC to DC converters
- bridge circuits
C5247264 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| 4N70L-ML-TN3-R | UTC | TO-252 | 117 | $ 0.414 | ||
| 7N70G-TC-TN3-R | UTC | TO-252 | 1,310 | $ 0.5062 | ||
| 7N65KL-TN3-R | UTC | TO-252 | 56 | $ 0.5865 | ||
| 7N65L-TN3-R | UTC | TO-252 | 15 | $ 0.5784 | ||
| 7N65G-TN3-R | UTC | TO-252 | 2,491 | $ 0.5064 | ||
| 4N65KL-TC-TN3-R | UTC | TO-252 | 0 | $ 0.3683 | ||
| 4N65KG-TN3-R | UTC | TO-252 | 0 | $ 0.3895 | ||
| 4N70KL-MT-TN3-R | UTC | TO-252-2(DPAK) | 0 | $ 0.2994 | ||
| 5N65L-TN3-R | UTC | TO-252-2(DPAK) | 0 | $ 0.3656 | ||
| 4N65KL-TN3-R | UTC | TO-252 | 0 | $ 0.2716 |