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EDA-ModelleEasyEDA
ST STL57N65M5
| Hersteller | |
| Herst.-Teilenr. | STL57N65M5 |
| LCSC-Nr. | C501013 |
| Verp. | PowerFLAT(8x8) |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 650V 22.5A PowerFLAT(8x8) |
| Datenblatt | ST STL57N65M5 |
| RoHS-Konformität | 3 Dokumente verfügbar |
| Alternativteile | 6 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ST | |
| Verp. | PowerFLAT(8x8) | |
| Output Capacitance(Coss) | 100pF | |
| Pd - Power Dissipation | 189W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 22.5A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF | |
| RDS(on) | 69mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.2nF | |
| Gate Charge(Qg) | 96nC@520V | |
| Vgs | ±25V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ST | |
| Verp. | PowerFLAT(8x8) | |
| Output Capacitance(Coss) | 100pF | |
| Pd - Power Dissipation | 189W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 22.5A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF | |
| RDS(on) | 69mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.2nF | |
| Gate Charge(Qg) | 96nC@520V | |
| Vgs | ±25V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the wellknown PowerMESH™ horizontal layout. The resulting product offers extremely low onresistance, making it particularly suitable for applications requiring high power and superior efficiency.
Merkmale
KI-Übersetzung
- Extremely low RDS(on)
- Low gate charge and input capacitance
- Excellent switching performance
- 100% avalanche tested
Anwendungen
KI-Übersetzung
- Switching applications
Vorrätig: 2,906
2,906 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 4.5671 | $ 4.57 |
| 10+ | $ 4.3516 | $ 43.52 |
| 30+ | $ 4.2204 | $ 126.61 |
| 100+ | $ 4.1102 | $ 411.02 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ST | |
| Verp. | PowerFLAT(8x8) | |
| Output Capacitance(Coss) | 100pF | |
| Pd - Power Dissipation | 189W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 22.5A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF | |
| RDS(on) | 69mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.2nF | |
| Gate Charge(Qg) | 96nC@520V | |
| Vgs | ±25V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ST | |
| Verp. | PowerFLAT(8x8) | |
| Output Capacitance(Coss) | 100pF | |
| Pd - Power Dissipation | 189W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 22.5A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF | |
| RDS(on) | 69mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.2nF | |
| Gate Charge(Qg) | 96nC@520V | |
| Vgs | ±25V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the wellknown PowerMESH™ horizontal layout. The resulting product offers extremely low onresistance, making it particularly suitable for applications requiring high power and superior efficiency.
Merkmale
KI-Übersetzung
- Extremely low RDS(on)
- Low gate charge and input capacitance
- Excellent switching performance
- 100% avalanche tested
Anwendungen
KI-Übersetzung
- Switching applications
C501013 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| STL45N65M5 | ST | PowerFLAT-HV(8x8) | 32 | $ 9.9817 | ||
| MMUB65R090RURH | MagnaChip Semicon | PDFN88 | 209 | $ 1.6243 | ||
| MMUB65R115RURH | MagnaChip Semicon | PDFN88 | 300 | $ 1.7338 | ||
| TK099V65Z,LQ | TOSHIBA | DFN-5(8x8) | 5 | $ 10.2449 | ||
| TPG65R125MH | WUXI UNIGROUP MICRO | DFN-5(8x8) | 0 | $ 2.0977 | ||
| STL47N60M6 | ST | PowerFLAT(8x8) | 0 | $ 16.797 |