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ESMT(Elite Semicon Memory Tech) M13S128168A-5TG2N product image
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ESMT(Elite Semicon Memory Tech) M13S128168A-5TG2N

Produttore
ESMT(Elite Semicon Memory Tech)Asian Brands
Cod. Prod.
M13S128168A-5TG2N
Cod. LCSC
C492209
Imballo
TSOP-66-10.2mm
Numero Cliente
Attr. chiave
128Mbit 200MHz DDR SDRAM TSOP-66-10.2mm Memory
Scheda TecnicaESMT(Elite Semicon Memory Tech) M13S128168A-5TG2N
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
QtàPr. unit.(Solo per riferimento)Importo totale
1+$ 0.7317$ 0.73
10+$ 0.7162$ 7.16
30+$ 0.7054$ 21.16
100+$ 0.6946$ 69.46
Package Standard1080/Full Tray
Prezzo migliore per quantità maggiore?
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Specifiche del Prodotto

Tutto
TipoDescrizione
CategoriaIntegrated Circuits (ICs)/Memory/Memory
ProduttoreESMT(Elite Semicon Memory Tech)
ImballoTSOP-66-10.2mm
Operating Temperature0℃~+70℃
FeaturesAuto precharge function;Data mask function
Refresh Current3mA
Memory Size128Mbit
Voltage - Supply2.3V~2.7V;80mA
Clock Frequency200MHz
Memory FormatDDR SDRAM
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Caratteristiche

Traduzione AI
  • Double-data-rate architecture, two data transfers per clock cycle
  • Bi-directional data strobe (DQS)
  • Differential clock inputs (CLK and CLK )
  • DLL aligns DQ and DQS transition with CLK transition
  • Four bank operation
  • CAS Latency : 2.5, 3, 4
  • Burst Type : Sequential and Interleave
  • Burst Length : 2, 4, 8
  • All inputs except data & DM are sampled at the rising edge of the system clock (CLK)
  • Data I/O transitions on both edges of data strobe (DQS)
  • DQS is edge-aligned with data for READs; center-aligned with data for WRITEs
  • Data mask (DM) for write masking only
  • VDD = 2.5V ± 0.2V, VDOQ = 2.5V ± 0.2V
  • 15.6us refresh interval
  • Auto & Self refresh
  • 2.5V I/O (SSTL_2 compatible)