Infineon IGL65R080D2XUMA1
| Produttore | |
| Cod. Prod. | IGL65R080D2XUMA1 |
| Cod. LCSC | C48009668 |
| Imballo | TSON-8 |
| Numero Cliente | |
| Attr. chiave | 650V 18A 1.2V 81W 80mΩ 1 N-channel N-Channel TSON-8 Single FETs, MOSFETs |
| Scheda Tecnica | Infineon IGL65R080D2XUMA1 |
| Parti alternative | 3 |
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | TSON-8 | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 18A | |
| Output Capacitance(Coss) | 40pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Pd - Power Dissipation | 81W | |
| Technology | E-mode | |
| RDS(on) | 80mΩ | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.54pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 240pF | |
| Gate Charge(Qg) | 3.3nC | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | TSON-8 | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 18A | |
| Output Capacitance(Coss) | 40pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 81W | |
| Technology | E-mode | |
| RDS(on) | 80mΩ | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.54pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 240pF | |
| Gate Charge(Qg) | 3.3nC | |
| Type | N-Channel |
Descrizione
Infineon's CoolGaN™ is a high-efficiency gallium nitride (GaN) transistor designed for 650V power conversion. It enables higher power density, supports reduced system BOM cost, and contributes to miniaturized form factors. The transistor is manufactured using 200mm (8-inch) wafer technology on a fully automated production line, featuring tight manufacturing tolerances and the highest product quality. This makes it suitable for a wide range of applications, from consumer electronics to industrial use.
Caratteristiche
- Enhancement-mode transistor
- Ultra-fast switching
- No reverse recovery charge
- Capable of reverse conduction
- Low gate and output charge
- Excellent commutation ruggedness
- 2kV HBM ESD rating
Applicazioni
Industrial, telecom, and data center switched-mode power supplies based on half-bridge hard-switching and soft-switching topologies (such as totem-pole PFC and high-frequency LLC), as well as chargers and adapters.
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 3.9685 | $ 3.97 |
| 10+ | $ 3.8788 | $ 38.79 |
| 30+ | $ 3.8201 | $ 114.60 |
| 100+ | $ 3.7613 | $ 376.13 |
Package Standard3000/Full Reel | ||
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | TSON-8 | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 18A | |
| Output Capacitance(Coss) | 40pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Pd - Power Dissipation | 81W | |
| Technology | E-mode | |
| RDS(on) | 80mΩ | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.54pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 240pF | |
| Gate Charge(Qg) | 3.3nC | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | TSON-8 | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 18A | |
| Output Capacitance(Coss) | 40pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 81W | |
| Technology | E-mode | |
| RDS(on) | 80mΩ | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.54pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 240pF | |
| Gate Charge(Qg) | 3.3nC | |
| Type | N-Channel |
Descrizione
Infineon's CoolGaN™ is a high-efficiency gallium nitride (GaN) transistor designed for 650V power conversion. It enables higher power density, supports reduced system BOM cost, and contributes to miniaturized form factors. The transistor is manufactured using 200mm (8-inch) wafer technology on a fully automated production line, featuring tight manufacturing tolerances and the highest product quality. This makes it suitable for a wide range of applications, from consumer electronics to industrial use.
Caratteristiche
- Enhancement-mode transistor
- Ultra-fast switching
- No reverse recovery charge
- Capable of reverse conduction
- Low gate and output charge
- Excellent commutation ruggedness
- 2kV HBM ESD rating
Applicazioni
Industrial, telecom, and data center switched-mode power supplies based on half-bridge hard-switching and soft-switching topologies (such as totem-pole PFC and high-frequency LLC), as well as chargers and adapters.
C48009668 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC |
| Tipo | Dettagli |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| IGLD65R055D2AUMA1 | Infineon | PG-LSON-8-1 | 14 | $ 6.5569 | ||
| IGL65R055D2XUMA1 | Infineon | TSON-8 | 3 | $ 10.6838 | ||
| IGLD65R080D2AUMA1 | Infineon | PG-LSON-8 | 0 | $ 5.4584 |