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onsemi HGTD1N120BNS9A
| Produttore | |
| Cod. Prod. | HGTD1N120BNS9A |
| Cod. LCSC | C462776 |
| Imballo | TO-252AA |
| Numero Cliente | |
| Attr. chiave | IGBT 1.2kV 5.3A TO-252AA |
| Scheda Tecnica | onsemi HGTD1N120BNS9A |
| Conformità RoHS | 4 documenti disponibili |
| Parti alternative | 4 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | onsemi | |
| Imballo | TO-252AA | |
| Td(off) | 67ns | |
| Pd - Power Dissipation | 60W | |
| Td(on) | 15ns | |
| Current - Collector(Ic) | 5.3A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | - | |
| IGBT Type | NPT (Non-Punch Through) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6V@50uA | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.9V@1.0A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 90uJ | |
| Turn-On Energy (Eon) | 70uJ | |
| Input Capacitance(Cies) | - | |
| Output Capacitance(Coes) | - | |
| Gate Charge(Qg) | 14nC |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | onsemi | |
| Imballo | TO-252AA | |
| Td(off) | 67ns | |
| Pd - Power Dissipation | 60W | |
| Td(on) | 15ns | |
| Current - Collector(Ic) | 5.3A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | - | |
| IGBT Type | NPT (Non-Punch Through) |
| Tipo | Descrizione | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6V@50uA | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.9V@1.0A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 90uJ | |
| Turn-On Energy (Eon) | 70uJ | |
| Input Capacitance(Cies) | - | |
| Output Capacitance(Coes) | - | |
| Gate Charge(Qg) | 14nC |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Caratteristiche
Traduzione AI
- 5.3A, 1200V, TC = 25℃
- 1200V Switching SOA Capability
- Typical EOFF ... 120μJ at TJ = 150℃
- Short Circuit Rating
- Low Conduction Loss
- Avalanche Rated
- Temperature Compensating SABER Model Thermal Impedance SPICE Model
- Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”
Applicazioni
Traduzione AI
- AC and DC motor controls
- Power supplies
- Drivers for solenoids, relays and contactors
Disponibile: 16,239
16,239 Pronta consegna
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 1.1443 | $ 1.14 |
| 10+ | $ 0.937 | $ 9.37 |
| 30+ | $ 0.8227 | $ 24.68 |
| 100+ | $ 0.6938 | $ 69.38 |
| 500+ | $ 0.6366 | $ 318.30 |
| 1,000+ | $ 0.6122 | $ 612.20 |
Package Standard2500/Full Reel | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | onsemi | |
| Imballo | TO-252AA | |
| Td(off) | 67ns | |
| Pd - Power Dissipation | 60W | |
| Td(on) | 15ns | |
| Current - Collector(Ic) | 5.3A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | - | |
| IGBT Type | NPT (Non-Punch Through) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6V@50uA | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.9V@1.0A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 90uJ | |
| Turn-On Energy (Eon) | 70uJ | |
| Input Capacitance(Cies) | - | |
| Output Capacitance(Coes) | - | |
| Gate Charge(Qg) | 14nC |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | onsemi | |
| Imballo | TO-252AA | |
| Td(off) | 67ns | |
| Pd - Power Dissipation | 60W | |
| Td(on) | 15ns | |
| Current - Collector(Ic) | 5.3A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | - | |
| IGBT Type | NPT (Non-Punch Through) |
| Tipo | Descrizione | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6V@50uA | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.9V@1.0A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 90uJ | |
| Turn-On Energy (Eon) | 70uJ | |
| Input Capacitance(Cies) | - | |
| Output Capacitance(Coes) | - | |
| Gate Charge(Qg) | 14nC |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Caratteristiche
Traduzione AI
- 5.3A, 1200V, TC = 25℃
- 1200V Switching SOA Capability
- Typical EOFF ... 120μJ at TJ = 150℃
- Short Circuit Rating
- Low Conduction Loss
- Avalanche Rated
- Temperature Compensating SABER Model Thermal Impedance SPICE Model
- Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”
Applicazioni
Traduzione AI
- AC and DC motor controls
- Power supplies
- Drivers for solenoids, relays and contactors
C462776 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| IGD08N120S7ATMA1 | Infineon | TO-252-3 | 50 | $ 2.7847 | ||
| FGD5T120SH | onsemi | TO-252 | 3 | $ 2.5742 | ||
| MSG10D120HLD0 | MASPOWER | TO-252 | 92 | $ 0.8253 | ||
| STGD5NB120SZT4 | ST | DPAK | 0 | $ 4.5571 |