- 핀아웃
- 풋프린트
실제 제품과 다를 수 있음
EDA 모델EasyEDA
onsemi FDT86113LZ
| 제조업체 | |
| 제조사 품번 | FDT86113LZ |
| LCSC 번호 | C462748 |
| 포장 | SOT-223 |
| 고객 번호 | |
| 주요 제원 | MOSFET N-CH 100V 3.3A SOT-223 |
| 데이터시트 | onsemi FDT86113LZ |
| RoHS 준수 | 4개 문서 이용 가능 |
| 대체 부품 | 10 |
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | onsemi | |
| 포장 | SOT-223 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 3.3A | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Pd - Power Dissipation | 2.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 100mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 315pF | |
| Gate Charge(Qg) | 6.8nC@10V |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | onsemi | |
| 포장 | SOT-223 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 3.3A | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| 타입 | 설명 | |
|---|---|---|
| Pd - Power Dissipation | 2.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 100mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 315pF | |
| Gate Charge(Qg) | 6.8nC@10V |
도움말 및 피드백유사 제품 보기 (0) >
개요
AI 번역
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.
주요 특징
AI 번역
- Maximum rDS(on) = 100 mΩ at VGS = 10 V, ID = 3.3 A
- Maximum rDS(on) = 145 mΩ at VGS = 4.5 V, ID = 2.7 A
- High-performance trench technology for ultra-low rDS(on)
- Industry-standard SMT package with high power and high current handling capability
- Typical HBM ESD protection rating > 3 KV
- 100% tested for unclamped inductive load (UIS)
- RoHS compliant
응용 분야
AI 번역
- DC - DC Switch
- SOT-223
재고 있음: 3,301
3,301 재고 있음, 당일 발송
최소값: 1배수: 1판매 단위: Piece
BOM 목록에 추가
| 수량 | 단가 | 총액 |
|---|---|---|
| 1+ | $ 1.0128 | $ 1.01 |
| 10+ | $ 0.8195 | $ 8.20 |
| 30+ | $ 0.7244 | $ 21.73 |
| 100+ | $ 0.6294 | $ 62.94 |
| 500+ | $ 0.572 | $ 286.00 |
| 1,000+ | $ 0.5425 | $ 542.50 |
표준 패키지4000/Full Reel | ||
수량이 많을수록 더 좋은 가격?
$
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | onsemi | |
| 포장 | SOT-223 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 3.3A | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Pd - Power Dissipation | 2.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 100mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 315pF | |
| Gate Charge(Qg) | 6.8nC@10V |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | onsemi | |
| 포장 | SOT-223 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 3.3A | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| 타입 | 설명 | |
|---|---|---|
| Pd - Power Dissipation | 2.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 100mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 315pF | |
| Gate Charge(Qg) | 6.8nC@10V |
도움말 및 피드백유사 제품 보기 (0) >
개요
AI 번역
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.
주요 특징
AI 번역
- Maximum rDS(on) = 100 mΩ at VGS = 10 V, ID = 3.3 A
- Maximum rDS(on) = 145 mΩ at VGS = 4.5 V, ID = 2.7 A
- High-performance trench technology for ultra-low rDS(on)
- Industry-standard SMT package with high power and high current handling capability
- Typical HBM ESD protection rating > 3 KV
- 100% tested for unclamped inductive load (UIS)
- RoHS compliant
응용 분야
AI 번역
- DC - DC Switch
- SOT-223
C462748 EasyEDA 라이브러리
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
대체 부품
| MPN | 제조사 | 포장 | 재고 현황 | 단가 | ||
|---|---|---|---|---|---|---|
| HSL3N10 | HUASHUO | SOT-223 | 40 | $ 0.104 | ||
| GT1K2N10H | GOFORD | SOT-223 | 10 | $ 0.1486 | ||
| NCE0106R-ES | ElecSuper | SOT-223 | 100 | $ 0.1125 | ||
| IRLL110TRPBF-VB | VBsemi Elec | SOT-223 | 65 | $0.3961 $0.4659 | ||
| FQT7N10LTF-ES | ElecSuper | SOT-223 | 270 | $ 0.2419 | ||
| 5N10S-MS | MSKSEMI | SOT-223 | 2,505 | $ 0.1037 | ||
| LWN1H5160A23 | Lewa Micro | SOT-223 | 930 | $ 0.2726 | ||
| DMN10H220LE-13-ES | ElecSuper | SOT-223 | 180 | $ 0.1799 | ||
| 5N10 | GOODWORK | SOT-223 | 0 | $ 0.0903 | ||
| FDT86106LZ | onsemi | SOT-223-4 | 0 | $ 0.8155 |