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onsemi FCB11N60TM
| Produttore | |
| Cod. Prod. | FCB11N60TM |
| Cod. LCSC | C462722 |
| Imballo | D2PAK |
| Numero Cliente | |
| Attr. chiave | 600V 11A 5V 125W 380mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS |
| Scheda Tecnica | onsemi FCB11N60TM |
| Conformità RoHS | 4 documenti disponibili |
| Parti alternative | 10 |
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | D2PAK | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 11A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 63pF | |
| RDS(on) | 380mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.49nF | |
| Gate Charge(Qg) | 52nC@10V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | D2PAK | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 11A | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 63pF | |
| RDS(on) | 380mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.49nF | |
| Gate Charge(Qg) | 52nC@10V |
Descrizione
SuperFET MOSFETs are the first-generation high-voltage super-junction (SJ) MOSFET family utilizing charge balance technology to achieve excellent low on-resistance and lower gate charge performance. This technology is specifically designed to minimize conduction losses while delivering superior switching performance, dv/dt ratings, and higher avalanche energy. As a result, SuperFET MOSFETs are ideal for switching power supply applications such as power factor correction (PFC), server/telecom power supplies, flat panel TV power supplies, ATX power supplies, and industrial power applications.
Caratteristiche
- 650 V @ TJ = 150°C
- Typical RDS(on) = 320 mΩ
- Ultra-low gate charge (typical Qg = 40 nC)
- Low effective output capacitance (typical Coss(eff.) = 95 pF)
- 100% avalanche tested
- RoHS compliant
Applicazioni
- Lighting
- Photovoltaic inverters
- AC-DC power supplies
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 1.6257 | $ 1.63 |
| 10+ | $ 1.3635 | $ 13.64 |
| 30+ | $ 1.1997 | $ 35.99 |
| 100+ | $ 1.0325 | $ 103.25 |
| 500+ | $ 0.9571 | $ 478.55 |
| 800+ | $ 0.9227 | $ 738.16 |
Package Standard800/Full Reel | ||
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | D2PAK | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 11A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 63pF | |
| RDS(on) | 380mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.49nF | |
| Gate Charge(Qg) | 52nC@10V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | D2PAK | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 11A | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 63pF | |
| RDS(on) | 380mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.49nF | |
| Gate Charge(Qg) | 52nC@10V |
Descrizione
SuperFET MOSFETs are the first-generation high-voltage super-junction (SJ) MOSFET family utilizing charge balance technology to achieve excellent low on-resistance and lower gate charge performance. This technology is specifically designed to minimize conduction losses while delivering superior switching performance, dv/dt ratings, and higher avalanche energy. As a result, SuperFET MOSFETs are ideal for switching power supply applications such as power factor correction (PFC), server/telecom power supplies, flat panel TV power supplies, ATX power supplies, and industrial power applications.
Caratteristiche
- 650 V @ TJ = 150°C
- Typical RDS(on) = 320 mΩ
- Ultra-low gate charge (typical Qg = 40 nC)
- Low effective output capacitance (typical Coss(eff.) = 95 pF)
- 100% avalanche tested
- RoHS compliant
Applicazioni
- Lighting
- Photovoltaic inverters
- AC-DC power supplies
C462722 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| STB21N65M5 | ST | D2PAK | 6 | $ 15.0197 | ||
| LSE70R380GT | LONTEN | TO-263-2L | 4 | $ 1.0124 | ||
| STB24NM60N | ST | D2PAK(TO-263) | 10 | $ 14.8069 | ||
| ASB65R220E | ANHI | TO-263 | 146 | $ 1.109 | ||
| R6020KNJTL | ROHM | TO-263S | 5 | $ 5.4408 | ||
| SiHB12N65E-VB | VBsemi Elec | TO-263(D2PAK) | 5 | $ 1.583 | ||
| VBL165R13S | VBsemi Elec | TO-263(D2PAK) | 2 | $1.3456 $1.583 | ||
| VBL18R13S | VBsemi Elec | TO-263 | 0 | $ 4.0027 | ||
| STB11NM80T4 | ST | D2PAK | 0 | $ 16.5225 | ||
| STB20NM60D | ST | D2PAK | 0 | $ 4.9098 |