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EDA-ModelleEasyEDA
Nexperia BSP52,115
| Hersteller | |
| Herst.-Teilenr. | BSP52,115 |
| LCSC-Nr. | C455052 |
| Verp. | SOT-223 |
| Kundennummer | |
| Hauptmerkm. | NPN Darlington transistor |
| Datenblatt | Nexperia BSP52,115 |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | Nexperia | |
| Verp. | SOT-223 | |
| Vbe Saturation(VBE(sat)) | 1.9V | |
| Current - Collector Cutoff | 50nA | |
| Operating Temperature | -65℃~+150℃ | |
| Vbe On(VBE(on)) | - | |
| Transition frequency(fT) | 200MHz | |
| Collector - Emitter Voltage VCEO | 80V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 2000 | |
| Pd - Power Dissipation | 1.25W | |
| Current - Collector(Ic) | 1A | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 1.3V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | Nexperia | |
| Verp. | SOT-223 | |
| Vbe Saturation(VBE(sat)) | 1.9V | |
| Current - Collector Cutoff | 50nA | |
| Operating Temperature | -65℃~+150℃ | |
| Vbe On(VBE(on)) | - | |
| Transition frequency(fT) | 200MHz |
| Typ | Beschreibung | |
|---|---|---|
| Collector - Emitter Voltage VCEO | 80V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 2000 | |
| Pd - Power Dissipation | 1.25W | |
| Current - Collector(Ic) | 1A | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 1.3V |
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Beschreibung
KI-Übersetzung
NPN Darlington transistor in an SOT223 plastic package. PNP complement: BSP62
Merkmale
KI-Übersetzung
- High current of 1 A
- Low voltage of 80 V
- Integrated diode and resistor
- AEC-Q101 qualified
Anwendungen
KI-Übersetzung
- Industrial high gain amplification
Vorrätig: 5,780
5,780 Ab Lager, sofort versandfertig
Minimum: 5Vielfaches: 5Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 5+ | $ 0.1726 | $ 0.86 |
| 50+ | $ 0.1346 | $ 6.73 |
| 150+ | $ 0.1184 | $ 17.76 |
| 1,000+ | $ 0.0981 | $ 98.10 |
| 2,000+ | $ 0.0891 | $ 178.20 |
| 5,000+ | $ 0.0836 | $ 418.00 |
Standardgehäuse1000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | Nexperia | |
| Verp. | SOT-223 | |
| Vbe Saturation(VBE(sat)) | 1.9V | |
| Current - Collector Cutoff | 50nA | |
| Operating Temperature | -65℃~+150℃ | |
| Vbe On(VBE(on)) | - | |
| Transition frequency(fT) | 200MHz | |
| Collector - Emitter Voltage VCEO | 80V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 2000 | |
| Pd - Power Dissipation | 1.25W | |
| Current - Collector(Ic) | 1A | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 1.3V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | Nexperia | |
| Verp. | SOT-223 | |
| Vbe Saturation(VBE(sat)) | 1.9V | |
| Current - Collector Cutoff | 50nA | |
| Operating Temperature | -65℃~+150℃ | |
| Vbe On(VBE(on)) | - | |
| Transition frequency(fT) | 200MHz |
| Typ | Beschreibung | |
|---|---|---|
| Collector - Emitter Voltage VCEO | 80V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 2000 | |
| Pd - Power Dissipation | 1.25W | |
| Current - Collector(Ic) | 1A | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 1.3V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
NPN Darlington transistor in an SOT223 plastic package. PNP complement: BSP62
Merkmale
KI-Übersetzung
- High current of 1 A
- Low voltage of 80 V
- Integrated diode and resistor
- AEC-Q101 qualified
Anwendungen
KI-Übersetzung
- Industrial high gain amplification
C455052 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Typ | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| FZT7053TA | DIODES | SOT-223 | 53 | $ 0.3835 | ||
| BSP52T3G | onsemi | SOT-223 | 5 | $ 0.148 | ||
| SBSP52T1G | onsemi | SOT-223-3 | 5 | $ 1.0268 | ||
| FZT603QTA | DIODES | SOT-223 | 17 | $0.1598 $1.065 | ||
| FZT600TA | DIODES | SOT-223 | 7 | $ 1.0307 | ||
| NZT605 | onsemi | SOT-223 | 266 | $ 0.6661 | ||
| FZT605TA | DIODES | SOT-223 | 2,484 | $ 0.5772 | ||
| BSP52T1G | onsemi | SOT-223 | 0 | $ 0.444 | ||
| BSP 52 H6327 | Infineon | SOT-223-4 | 0 | $ 0.318 | ||
| FZT600BQTA | DIODES | SOT-223 | 0 | $ 0.7501 |