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Modelli EDAEasyEDA
SemiHow HFS10N60U
| Produttore | |
| Cod. Prod. | HFS10N60U |
| Cod. LCSC | C430879 |
| Imballo | TO-220F-3 |
| Numero Cliente | |
| Attr. chiave | 600V 9.5A 4.5V 50W 670mΩ@10V 1 N-channel TO-220F-3 Single FETs, MOSFETs |
| Scheda Tecnica | SemiHow HFS10N60U |
| Parti alternative | 9 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | SemiHow | |
| Imballo | TO-220F-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 9.5A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 50W | |
| Reverse Transfer Capacitance (Crss@Vds) | 14.5pF | |
| RDS(on) | 670mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.1nF | |
| Gate Charge(Qg) | 38nC@480V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | SemiHow | |
| Imballo | TO-220F-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 9.5A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 50W | |
| Reverse Transfer Capacitance (Crss@Vds) | 14.5pF | |
| RDS(on) | 670mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.1nF | |
| Gate Charge(Qg) | 38nC@480V |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- Innovative Design
- Superior avalanche ruggedness technology
- Robust gate oxide technology
- Ultra-low intrinsic capacitance
- Excellent switching characteristics
- Unmatched gate charge: 29 nC (typical)
- Extended safe operating area
- Lower on-resistance RDS(ON): 0.67 Ω (typical) @VGS = 10V
- 100% avalanche tested
Non disponibile al momento
Minimo: 1Multiplo: 1Unità di vendita: Piece
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | SemiHow | |
| Imballo | TO-220F-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 9.5A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 50W | |
| Reverse Transfer Capacitance (Crss@Vds) | 14.5pF | |
| RDS(on) | 670mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.1nF | |
| Gate Charge(Qg) | 38nC@480V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | SemiHow | |
| Imballo | TO-220F-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 9.5A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 50W | |
| Reverse Transfer Capacitance (Crss@Vds) | 14.5pF | |
| RDS(on) | 670mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.1nF | |
| Gate Charge(Qg) | 38nC@480V |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- Innovative Design
- Superior avalanche ruggedness technology
- Robust gate oxide technology
- Ultra-low intrinsic capacitance
- Excellent switching characteristics
- Unmatched gate charge: 29 nC (typical)
- Extended safe operating area
- Lower on-resistance RDS(ON): 0.67 Ω (typical) @VGS = 10V
- 100% avalanche tested
C430879 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| 14N65L-ML-TF3-T | UTC | TO-220F | 71 | $ 0.7574 | ||
| AOTF10N60 | AOS | TO-220F-3 | 6 | $ 2.9162 | ||
| DOPF12N65 | DOINGTER | TO-220F | 831 | $0.3909 $0.4248 | ||
| HF12N60 | HL(Haolin Elec) | TO-220F-3 | 2 | $ 0.9601 | ||
| TK10A80E-OSEN | OSEN | TO-220F | 170 | $ 0.73 | ||
| SVF12N65F | Hangzhou Silan Microelectronics | TO-220F | 3,295 | $ 0.7028 | ||
| BRF10N60 | BLUE ROCKET | TO-220FL | 1 | $ 0.4949 | ||
| OSPF10N80 | OSEN | TO-220F | 40 | $ 0.7117 | ||
| 12N65 | HANGYU MICROELECTRONICS | TO-220F | 10 | $ 0.4285 |