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SILICON LABS SI8921BD-IS4 product image
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SILICON LABS SI8921BD-IS4

Hersteller
SILICON LABS
Herst.-Teilenr.
SI8921BD-IS4
LCSC-Nr.
C430307
Verp.
SOIC-8-300mil
Kundennummer
Hauptmerkm.
1 40uV SOIC-8-300mil Instrumentation, Op Amps, Buffer Amps RoHS
DatenblattSILICON LABS SI8921BD-IS4
Vorrätig: 10
10 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
Stk.E-PreisGesamtbetrag
1+$ 7.1006$ 7.10
10+$ 6.9186$ 69.19
46+$ 6.7989$ 312.75
92+$ 6.6776$ 614.34
Standardgehäuse46/Full Tube
Besserer Preis bei größerer Menge?
$

Produktspezifikationen

Alle
TypBeschreibung
KategorieIntegrated Circuits (ICs)/Linear/Amplifiers/Instrumentation, Op Amps, Buffer Amps
HerstellerSILICON LABS
Verp.SOIC-8-300mil
Output Current-
Number of Channels1
Vos - Input Offset Voltage40uV
Slew Rate-
Input Offset Current(Ios)-
Operating Temperature-40℃~+125℃
Ib - Input Bias Current-
Common Mode Rejection Ratio(CMRR)-
Input Offset Voltage Drift(Vos TC)500nV/℃
Gain Bandwidth Product-
Quiescent Current-
Features-
Input Voltage Noise Density-
Dual Supply-
Rail to Rail-
Single Supply3V~5.5V
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Beschreibung

KI-Übersetzung

The Si8921/22 is a galvanically isolated analog amplifier. The low-voltage differential input is ideal for measuring voltage across a current shunt resistor or for any place where a sensor must be isolated from the control system. The output is a differential analog signal amplified by either 8.2× or 32.8×. The very low signal delay of the Si8921/22 allows control systems to respond quickly to fault conditions or changes in load. Low offset and gain drift ensure that accuracy is maintained over the entire operating temperature range. Exceptionally high common-mode transient immunity means that the Si8921/22 delivers accurate measurements even in the presence of high-power switching as is found in motor drive systems and inverters. The Si8921/22 isolated amplifier utilizes Silicon Labs’ proprietary isolation technology. It supports up to 5.0 kVrms withstand voltage per UL1577. This technology enables higher performance, reduced variation with temperature and age, tighter part-to-part matching, and longer lifetimes compared to other isolation technologies.

Merkmale

KI-Übersetzung
  • Low voltage differential input, ±62.5 mV and ±250 mV options
  • Low signal delay: 0.8 μs
  • Typical input offset: ±40 μV
  • Typical gain error: ±0.1%
  • Excellent drift specifications: ±0.5 μV/℃ typical offset drift, -4 ppm/℃ typical gain drift
  • Typical Nonlinearity: 0.003% fullscale
  • Typical SNR: 82 dB over 100 kHz bandwidth
  • Typical THD: -88 dB
  • High common-mode transient immunity: 75 kV/μs
  • Automotive-grade OPNs: AIAG compliant PPAP documentation support, IMDS and CAMDS listing support
  • Compact packages: 8-pin wide body stretched SOIC, 8-pin narrow body SOIC
  • -40 to 125 ℃

Anwendungen

KI-Übersetzung
  • Industrial, HEV and renewable energy inverters
  • AC, Brushless, and DC motor controls and drives
  • Variable speed motor control in consumer white goods
  • Isolated switch mode and UPS power supplies
  • Automotive on-board chargers, battery management systems, and charging stations