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Modele EDAEasyEDA
ElecSuper BSS84LT1G(ES)
| Producent | ElecSuperAsian Brands |
| Nr części prod. | BSS84LT1G(ES) |
| Nr LCSC | C42379934 |
| Opak. | SOT-23 |
| Numer Klienta | |
| Klucz. cechy | MOSFET P-CH 60V 0.2A SOT-23 |
| Karta Katalogowa | ElecSuper BSS84LT1G(ES) |
| Części alternatywne | 10 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | ElecSuper | |
| Opak. | SOT-23 | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 200mA | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Pd - Power Dissipation | 350mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.6pF | |
| RDS(on) | 6.3Ω@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 17pF | |
| Gate Charge(Qg) | 1.1nC@4.5V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | ElecSuper | |
| Opak. | SOT-23 | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 200mA | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 350mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.6pF | |
| RDS(on) | 6.3Ω@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 17pF | |
| Gate Charge(Qg) | 1.1nC@4.5V | |
| Type | P-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
The BSS84LT1G(ES) is P-Channel enhancement MOS Field Effect Transistor. Uses advanced technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product BSS84LT1G(ES) is Pb-free.
Funkcje
Tłumaczenie AI
- -60V, RDS(ON)=3.5Ω(Typ.) @VGS=-10V RDS(ON)=4.5Ω(Typ.) @VGS=-4.5V
- Fast Switching
- High density cell design for low RDS(on)
- Material: Halogen free
- Reliable and rugged
- Avalanche Rated
- Low leakage current
Zastosowania
Tłumaczenie AI
- Power management in portable/desktop PCs
- DC/DC conversion
Na stanie: 1,200
1,200 W magazynie, wysyłka natychmiastowa
Minimum: 50Wielokrotność: 50Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 50+ | $ 0.0187 | $ 0.94 |
| 500+ | $ 0.0146 | $ 7.30 |
| 3,000+ | $ 0.0123 | $ 36.90 |
| 6,000+ | $ 0.0109 | $ 65.40 |
| 24,000+ | $ 0.0097 | $ 232.80 |
| 51,000+ | $ 0.0091 | $ 464.10 |
Standardowa Obudowa3000/Full Reel | ||
Lepsza cena za większą ilość?
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | ElecSuper | |
| Opak. | SOT-23 | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 200mA | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Pd - Power Dissipation | 350mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.6pF | |
| RDS(on) | 6.3Ω@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 17pF | |
| Gate Charge(Qg) | 1.1nC@4.5V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | ElecSuper | |
| Opak. | SOT-23 | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 200mA | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 350mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.6pF | |
| RDS(on) | 6.3Ω@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 17pF | |
| Gate Charge(Qg) | 1.1nC@4.5V | |
| Type | P-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
The BSS84LT1G(ES) is P-Channel enhancement MOS Field Effect Transistor. Uses advanced technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product BSS84LT1G(ES) is Pb-free.
Funkcje
Tłumaczenie AI
- -60V, RDS(ON)=3.5Ω(Typ.) @VGS=-10V RDS(ON)=4.5Ω(Typ.) @VGS=-4.5V
- Fast Switching
- High density cell design for low RDS(on)
- Material: Halogen free
- Reliable and rugged
- Avalanche Rated
- Low leakage current
Zastosowania
Tłumaczenie AI
- Power management in portable/desktop PCs
- DC/DC conversion
C42379934 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| BSS84,215(ES) | ElecSuper | SOT-23 | 29,350 | $ 0.0188 | ||
| BSS84AK,215(ES) | ElecSuper | SOT-23 | 3,150 | $ 0.0246 | ||
| BSS84PH6327(ES) | ElecSuper | SOT-23 | 500 | $ 0.0228 | ||
| BSS84-7-F(ES) | ElecSuper | SOT-23 | 3,750 | $ 0.0232 | ||
| BSS84(ES) | ElecSuper | SOT-23 | 1,600 | $ 0.0189 | ||
| EST03P06 | ElecSuper | SOT-23-3L | 2,930 | $ 0.116 | ||
| ZXMP10A13FTA(ES) | ElecSuper | SOT-23 | 2,980 | $ 0.1352 | ||
| SI2309-ES | ElecSuper | SOT-23 | 2,920 | $ 0.0425 | ||
| FDN5618P-ES | ElecSuper | SOT-23 | 2,880 | $ 0.0513 | ||
| PJM10H01PSA | ElecSuper | SOT-23 | 0 | $ 0.0521 |