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Modelli EDAEasyEDA
NCE NCEP0160F
| Produttore | NCEAsian Brands |
| Cod. Prod. | NCEP0160F |
| Cod. LCSC | C414148 |
| Imballo | TO-220F-3 |
| Numero Cliente | |
| Attr. chiave | 40W 100V 60A 4V 10.8mΩ@10V 1 N-channel N-Channel TO-220F-3 Single FETs, MOSFETs |
| Scheda Tecnica | NCE NCEP0160F |
| Parti alternative | 3 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | NCE | |
| Imballo | TO-220F-3 | |
| Output Capacitance(Coss) | 273pF | |
| Pd - Power Dissipation | 40W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 60A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF | |
| RDS(on) | 10.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.5nF | |
| Gate Charge(Qg) | 37nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | NCE | |
| Imballo | TO-220F-3 | |
| Output Capacitance(Coss) | 273pF | |
| Pd - Power Dissipation | 40W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 60A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF | |
| RDS(on) | 10.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.5nF | |
| Gate Charge(Qg) | 37nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
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Descrizione
Traduzione AI
NCEP0160F utilizes Super Trench technology, uniquely optimized to deliver the highest efficiency high-frequency switching performance. The combination of ultra-low RDS(ON) and QG minimizes both conduction and switching power losses. This device is ideal for high-frequency switching and synchronous rectification.
Caratteristiche
Traduzione AI
- VDS = 100V, ID = 60A
- RDS(ON) = 9.2 mΩ (typical) @ VGS = 10V
- Excellent gate charge × RDS(on) product (Figure of Merit)
- Ultra-low on-resistance RDS(ON)
- Operating temperature up to 175°C
- Lead-free lead finish
- 100% UIS tested
Applicazioni
Traduzione AI
- DC/DC Converter — Ideal for high-frequency switching and synchronous rectification
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 0.7157 | $ 0.72 |
| 10+ | $ 0.5659 | $ 5.66 |
| 50+ | $ 0.491 | $ 24.55 |
| 100+ | $ 0.4161 | $ 41.61 |
| 500+ | $ 0.3714 | $ 185.70 |
| 1,000+ | $ 0.3475 | $ 347.50 |
Package Standard50/Full Tube | ||
Prezzo migliore per quantità maggiore?
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | NCE | |
| Imballo | TO-220F-3 | |
| Output Capacitance(Coss) | 273pF | |
| Pd - Power Dissipation | 40W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 60A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF | |
| RDS(on) | 10.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.5nF | |
| Gate Charge(Qg) | 37nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | NCE | |
| Imballo | TO-220F-3 | |
| Output Capacitance(Coss) | 273pF | |
| Pd - Power Dissipation | 40W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 60A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF | |
| RDS(on) | 10.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.5nF | |
| Gate Charge(Qg) | 37nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
NCEP0160F utilizes Super Trench technology, uniquely optimized to deliver the highest efficiency high-frequency switching performance. The combination of ultra-low RDS(ON) and QG minimizes both conduction and switching power losses. This device is ideal for high-frequency switching and synchronous rectification.
Caratteristiche
Traduzione AI
- VDS = 100V, ID = 60A
- RDS(ON) = 9.2 mΩ (typical) @ VGS = 10V
- Excellent gate charge × RDS(on) product (Figure of Merit)
- Ultra-low on-resistance RDS(ON)
- Operating temperature up to 175°C
- Lead-free lead finish
- 100% UIS tested
Applicazioni
Traduzione AI
- DC/DC Converter — Ideal for high-frequency switching and synchronous rectification
C414148 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| NCEP0178AF | NCE | TO-220F | 590 | $ 1.2608 | ||
| NCEP026N10F | NCE | TO-220F | 0 | $ 2.4372 | ||
| NCEP02580F | NCE | TO-220F-3 | 0 | $ 3.1913 |