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EDA-ModelleEasyEDA
ElecSuper BSS123,215
| Hersteller | ElecSuperAsian Brands |
| Herst.-Teilenr. | BSS123,215 |
| LCSC-Nr. | C41365199 |
| Verp. | SOT-23 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 100V 290mA SOT-23 |
| Datenblatt | ElecSuper BSS123,215 |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ElecSuper | |
| Verp. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 2.8pF | |
| Current - Continuous Drain(Id) | 290mA | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Pd - Power Dissipation | 350mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| RDS(on) | 2.7Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 29pF | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ElecSuper | |
| Verp. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 2.8pF | |
| Current - Continuous Drain(Id) | 290mA |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Pd - Power Dissipation | 350mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| RDS(on) | 2.7Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 29pF | |
| Type | N-Channel |
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Beschreibung
KI-Übersetzung
BSS123,215 is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product BSS123,215 is lead-free.
Merkmale
KI-Übersetzung
- 100V, RDS(ON) = 2.70 Ω (typical) at VGS = 10V
- RDS(ON) = 2.95 Ω (typical) at VGS = 4.5V
- High-density cell design for low RDS(ON)
- Halogen-free material
- Robust and reliable
- Avalanche rated
- Low leakage current
Anwendungen
KI-Übersetzung
- PWM applications
- Load switching
- Power management for portable/desktop PCs
- DC/DC conversion
Nicht vorrätig
Benachrichtigen
Minimum: 50Vielfaches: 50Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 50+ | $ 0.0193 | $ 0.97 |
| 500+ | $ 0.0147 | $ 7.35 |
| 3,000+ | $ 0.0121 | $ 36.30 |
| 6,000+ | $ 0.0106 | $ 63.60 |
| 24,000+ | $ 0.0093 | $ 223.20 |
| 51,000+ | $ 0.0085 | $ 433.50 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ElecSuper | |
| Verp. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 2.8pF | |
| Current - Continuous Drain(Id) | 290mA | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Pd - Power Dissipation | 350mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| RDS(on) | 2.7Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 29pF | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ElecSuper | |
| Verp. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 2.8pF | |
| Current - Continuous Drain(Id) | 290mA |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Pd - Power Dissipation | 350mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| RDS(on) | 2.7Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 29pF | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
BSS123,215 is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product BSS123,215 is lead-free.
Merkmale
KI-Übersetzung
- 100V, RDS(ON) = 2.70 Ω (typical) at VGS = 10V
- RDS(ON) = 2.95 Ω (typical) at VGS = 4.5V
- High-density cell design for low RDS(ON)
- Halogen-free material
- Robust and reliable
- Avalanche rated
- Low leakage current
Anwendungen
KI-Übersetzung
- PWM applications
- Load switching
- Power management for portable/desktop PCs
- DC/DC conversion
C41365199 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| BSS123 | ElecSuper | SOT-23 | 100 | $ 0.0173 | ||
| ES0103Y | ElecSuper | SOT-23-3L | 1,350 | $ 0.074 | ||
| AS2324 | ElecSuper | SOT-23 | 1,280 | $ 0.0457 | ||
| PMV213SN,215 | ElecSuper | SOT-23 | 0 | $ 0.0556 | ||
| BSS123-7-F | ElecSuper | SOT-23 | 0 | $ 0.0193 | ||
| BSS123NH6433XTMA1 | ElecSuper | SOT-23 | 0 | $ 0.0716 | ||
| BSS123LT1G | ElecSuper | SOT-23 | 0 | $ 0.0193 | ||
| BSS123K | ElecSuper | SOT-23 | 0 | $ 0.0165 | ||
| BSS169 | ElecSuper | SOT-23 | 0 | $ 0.0193 | ||
| ESBSS123LT1G | ElecSuper | SOT-23 | 0 | $ 0.0256 |