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Modelli EDAEasyEDA
ElecSuper EST05N10
| Produttore | ElecSuperAsian Brands |
| Cod. Prod. | EST05N10 |
| Cod. LCSC | C41365196 |
| Imballo | SOT-23 |
| Numero Cliente | |
| Attr. chiave | MOSFET N-CH 100V 2.6A SOT-23 |
| Scheda Tecnica | ElecSuper EST05N10 |
| Parti alternative | 17 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | ElecSuper | |
| Imballo | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 29pF | |
| Current - Continuous Drain(Id) | 2.6A | |
| Gate Threshold Voltage (Vgs(th)) | 1.65V | |
| Pd - Power Dissipation | 1.4W | |
| RDS(on) | 90mΩ@10V;120mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.4pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 206pF | |
| Gate Charge(Qg) | 4.2nC@10V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | ElecSuper | |
| Imballo | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 29pF | |
| Current - Continuous Drain(Id) | 2.6A | |
| Gate Threshold Voltage (Vgs(th)) | 1.65V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 1.4W | |
| RDS(on) | 90mΩ@10V;120mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.4pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 206pF | |
| Gate Charge(Qg) | 4.2nC@10V | |
| Type | N-Channel |
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Descrizione
Traduzione AI
EST05N10 is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product EST05N10 is lead-free.
Caratteristiche
Traduzione AI
- 100V, RDS(ON) = 95 mΩ (typical), VGS = 10V
- RDS(ON) = 135 mΩ (typical), VGS = 4.5V
- Trench MOSFET technology
- High-density cell design for low RDS(ON)
- Halogen-free material
- High reliability and durability
- Avalanche-rated
- Low leakage current
Applicazioni
Traduzione AI
- PWM applications
- Load switching
- Power management for portable/desktop PCs
- DC/DC conversion
Esaurito
Avvisami
Minimo: 20Multiplo: 20Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 20+ | $ 0.0406 | $ 0.81 |
| 200+ | $ 0.0309 | $ 6.18 |
| 600+ | $ 0.0256 | $ 15.36 |
| 3,000+ | $ 0.0223 | $ 66.90 |
| 9,000+ | $ 0.0195 | $ 175.50 |
| 21,000+ | $ 0.018 | $ 378.00 |
Package Standard3000/Full Reel | ||
Prezzo migliore per quantità maggiore?
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | ElecSuper | |
| Imballo | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 29pF | |
| Current - Continuous Drain(Id) | 2.6A | |
| Gate Threshold Voltage (Vgs(th)) | 1.65V | |
| Pd - Power Dissipation | 1.4W | |
| RDS(on) | 90mΩ@10V;120mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.4pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 206pF | |
| Gate Charge(Qg) | 4.2nC@10V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | ElecSuper | |
| Imballo | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 29pF | |
| Current - Continuous Drain(Id) | 2.6A | |
| Gate Threshold Voltage (Vgs(th)) | 1.65V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 1.4W | |
| RDS(on) | 90mΩ@10V;120mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.4pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 206pF | |
| Gate Charge(Qg) | 4.2nC@10V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
EST05N10 is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product EST05N10 is lead-free.
Caratteristiche
Traduzione AI
- 100V, RDS(ON) = 95 mΩ (typical), VGS = 10V
- RDS(ON) = 135 mΩ (typical), VGS = 4.5V
- Trench MOSFET technology
- High-density cell design for low RDS(ON)
- Halogen-free material
- High reliability and durability
- Avalanche-rated
- Low leakage current
Applicazioni
Traduzione AI
- PWM applications
- Load switching
- Power management for portable/desktop PCs
- DC/DC conversion
C41365196 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| SI2392ADS-T1-GE3 | ElecSuper | SOT-23 | 4,200 | $ 0.057 | ||
| DMN10H220L-7 | ElecSuper | SOT-23 | 2,690 | $ 0.0643 | ||
| SI2324A-TP | ElecSuper | SOT-23 | 2,050 | $ 0.0443 | ||
| ES5N10 | ElecSuper | SOT-23 | 1,890 | $ 0.0473 | ||
| AM2394NE(ES) | ElecSuper | SOT-23 | 645 | $ 0.1309 | ||
| ES5N10A | ElecSuper | SOT23-3L | 3,000 | $ 0.0624 | ||
| 5N10S | ElecSuper | SOT-23 | 3,000 | $ 0.0484 | ||
| ES5N10S | ElecSuper | SOT23-3L | 1,820 | $ 0.0369 | ||
| AS2324 | ElecSuper | SOT-23 | 1,280 | $ 0.0457 | ||
| IRLML0100TRPBF-ES | ElecSuper | SOT-23 | 1,340 | $ 0.0323 | ||
| ESE0102 | ElecSuper | SOT-23 | 2,270 | $ 0.058 | ||
| ESJ2324 | ElecSuper | SOT-23 | 860 | $ 0.0754 | ||
| ESJM10H03NSC | ElecSuper | SOT-23 | 580 | $ 0.058 | ||
| 5N10 | ElecSuper | SOT-23 | 0 | $ 0.0443 | ||
| 5N10-ES | ElecSuper | SOT-23 | 0 | $ 0.0439 | ||
| ESP1002 | ElecSuper | SOT-23 | 0 | $ 0.0316 | ||
| EST02N10 | ElecSuper | SOT-23 | 0 | $ 0.047 |