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Hangzhou Silan Microelectronics SVF4N65M
| Produttore | Hangzhou Silan MicroelectronicsAsian Brands |
| Cod. Prod. | SVF4N65M |
| Cod. LCSC | C403822 |
| Imballo | TO-251D-3 |
| Numero Cliente | |
| Attr. chiave | MOSFET N-CH 650V 4A TO-251D-3 |
| Scheda Tecnica | Hangzhou Silan Microelectronics SVF4N65M |
| Parti alternative | 5 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Hangzhou Silan Microelectronics | |
| Imballo | TO-251D-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 55pF | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 77W | |
| Reverse Transfer Capacitance (Crss@Vds) | 4.1pF | |
| RDS(on) | 2.3Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 430pF | |
| Gate Charge(Qg) | 13nC@10V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Hangzhou Silan Microelectronics | |
| Imballo | TO-251D-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 55pF | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 77W | |
| Reverse Transfer Capacitance (Crss@Vds) | 4.1pF | |
| RDS(on) | 2.3Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 430pF | |
| Gate Charge(Qg) | 13nC@10V | |
| Type | N-Channel |
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Descrizione
Traduzione AI
SVF4N65F/M/MJ/D is an N-channel enhancement-mode power MOSFET fabricated using Silicon Expert's proprietary F-Cell structured VDMOS technology. The improved process and cell structure are specially designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are widely used in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drives.
Caratteristiche
Traduzione AI
- 4A, 650V, R DS(on)(typ) = 2.3 Ω at VGS = 10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability
Applicazioni
Traduzione AI
- AC-DC power supplies
- DC-DC converters
- H-bridge PWM motor drivers
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 0.2616 | $ 0.26 |
| 10+ | $ 0.2178 | $ 2.18 |
| 30+ | $ 0.199 | $ 5.97 |
| 75+ | $ 0.1756 | $ 13.17 |
| 525+ | $ 0.1651 | $ 86.68 |
| 975+ | $ 0.1589 | $ 154.93 |
Package Standard75/Full Tube | ||
Prezzo migliore per quantità maggiore?
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Hangzhou Silan Microelectronics | |
| Imballo | TO-251D-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 55pF | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 77W | |
| Reverse Transfer Capacitance (Crss@Vds) | 4.1pF | |
| RDS(on) | 2.3Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 430pF | |
| Gate Charge(Qg) | 13nC@10V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Hangzhou Silan Microelectronics | |
| Imballo | TO-251D-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 55pF | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 77W | |
| Reverse Transfer Capacitance (Crss@Vds) | 4.1pF | |
| RDS(on) | 2.3Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 430pF | |
| Gate Charge(Qg) | 13nC@10V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
SVF4N65F/M/MJ/D is an N-channel enhancement-mode power MOSFET fabricated using Silicon Expert's proprietary F-Cell structured VDMOS technology. The improved process and cell structure are specially designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are widely used in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drives.
Caratteristiche
Traduzione AI
- 4A, 650V, R DS(on)(typ) = 2.3 Ω at VGS = 10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability
Applicazioni
Traduzione AI
- AC-DC power supplies
- DC-DC converters
- H-bridge PWM motor drivers
C403822 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| SVF4N65CAM | Hangzhou Silan Microelectronics | TO-251D-3 | 40 | $ 0.3252 | ||
| SVF7N65CMJ | Hangzhou Silan Microelectronics | TO-251-3 | 1,365 | $ 0.3835 | ||
| SVF4N65RMJ | Hangzhou Silan Microelectronics | TO-251 | 0 | $ 0.5817 | ||
| SVF4N60CAMJ | Hangzhou Silan Microelectronics | TO-251 | 0 | $ 0.2933 | ||
| SVFP7N70MJ | Hangzhou Silan Microelectronics | TO-251J-3L | 0 | $ 0.7396 |