DIODES DMN7022LFGQ-7
| Produttore | |
| Cod. Prod. | DMN7022LFGQ-7 |
| Cod. LCSC | C397978 |
| Imballo | PowerDI3333-8 |
| Numero Cliente | |
| Attr. chiave | 2W 75V 7.8A 3V 22mΩ@10V 1 N-channel N-Channel PowerDI3333-8 Single FETs, MOSFETs |
| Scheda Tecnica | DIODES DMN7022LFGQ-7 |
| Parti alternative | 10 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | DIODES | |
| Imballo | PowerDI3333-8 | |
| Output Capacitance(Coss) | 126pF | |
| Pd - Power Dissipation | 2W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 75V | |
| Current - Continuous Drain(Id) | 7.8A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 96.1pF | |
| RDS(on) | 22mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.737nF | |
| Gate Charge(Qg) | 56.5nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | DIODES | |
| Imballo | PowerDI3333-8 | |
| Output Capacitance(Coss) | 126pF | |
| Pd - Power Dissipation | 2W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 75V | |
| Current - Continuous Drain(Id) | 7.8A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 96.1pF | |
| RDS(on) | 22mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.737nF | |
| Gate Charge(Qg) | 56.5nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
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Descrizione
Traduzione AI
This MOSFET is designed to meet the stringent requirements of automotive applications. It complies with AEC-Q101 and is supported by PPAP, making it ideal for:
- Backlighting
- Power management functions
- DC-DC converters
Caratteristiche
Traduzione AI
- 100% unclamped inductive switching — enhanced reliability and durability for end applications
- Low RDS(ON) — minimized conduction losses
- Compact, thermally efficient package for higher-density end products
- Occupies only 33% of the board area of an SO-8 package, enabling smaller end products
- Fully lead-free, fully RoHS compliant
- Halogen- and antimony-free — "green" device
- Compliant with AEC-Q101 high-reliability standard
- PPAP capable
Applicazioni
Traduzione AI
- Backlight Illumination - Power Management Function - DC-DC Converter
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 1.2461 | $ 1.25 |
| 10+ | $ 1.0674 | $ 10.67 |
| 30+ | $ 0.9781 | $ 29.34 |
| 100+ | $ 0.8887 | $ 88.87 |
| 500+ | $ 0.788 | $ 394.00 |
| 1,000+ | $ 0.7604 | $ 760.40 |
Package Standard3000/Full Reel | ||
Prezzo migliore per quantità maggiore?
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | DIODES | |
| Imballo | PowerDI3333-8 | |
| Output Capacitance(Coss) | 126pF | |
| Pd - Power Dissipation | 2W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 75V | |
| Current - Continuous Drain(Id) | 7.8A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 96.1pF | |
| RDS(on) | 22mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.737nF | |
| Gate Charge(Qg) | 56.5nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | DIODES | |
| Imballo | PowerDI3333-8 | |
| Output Capacitance(Coss) | 126pF | |
| Pd - Power Dissipation | 2W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 75V | |
| Current - Continuous Drain(Id) | 7.8A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 96.1pF | |
| RDS(on) | 22mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.737nF | |
| Gate Charge(Qg) | 56.5nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
This MOSFET is designed to meet the stringent requirements of automotive applications. It complies with AEC-Q101 and is supported by PPAP, making it ideal for:
- Backlighting
- Power management functions
- DC-DC converters
Caratteristiche
Traduzione AI
- 100% unclamped inductive switching — enhanced reliability and durability for end applications
- Low RDS(ON) — minimized conduction losses
- Compact, thermally efficient package for higher-density end products
- Occupies only 33% of the board area of an SO-8 package, enabling smaller end products
- Fully lead-free, fully RoHS compliant
- Halogen- and antimony-free — "green" device
- Compliant with AEC-Q101 high-reliability standard
- PPAP capable
Applicazioni
Traduzione AI
- Backlight Illumination - Power Management Function - DC-DC Converter
C397978 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| DMN7022LFG-7 | DIODES | PowerDI3333-8 | 1 | $ 0.5325 | ||
| SQSA12CENW-T1_GE3 | VISHAY | PowerPAK1212-8W | 3,400 | $ 1.0587 | ||
| CMSC130N10 | Cmos | DFN-8(3.3x3.3) | 480 | $0.2305 $0.2426 | ||
| RQ3N060ATTB1 | ROHM | HSMT-8 | 0 | $ 1.4021 | ||
| SI7812DN-T1-E3 | VISHAY | PowerPAK1212-8 | 0 | $ 1.0088 | ||
| DMT8012LFG-7 | DIODES | POWERDI3333-8 | 0 | $ 1.0284 | ||
| BSZ160N10NS3G | Infineon | TSDSON-8(3.3x3.3) | 0 | $ 0.944 | ||
| SI7812DN-T1-GE3 | VISHAY | PowerPAK1212-8 | 0 | $ 1.2205 | ||
| DMT10H009LCG-7 | DIODES | VDFN3333-8 | 0 | $ 1.9148 | ||
| NVTFWS040N10MCLTAG | onsemi | WDFNW-8(3.3x3.3) | 0 | $ 0.8937 |



