MICROCHIP JANTX1N982BUR-1/TR
| Produttore | |
| Cod. Prod. | JANTX1N982BUR-1/TR |
| Cod. LCSC | C3765017 |
| Imballo | DO-35(DO-204AH) |
| Numero Cliente | |
| Attr. chiave | 1 Independent 75V DO-35(DO-204AH) Single Zener Diodes RoHS |
| Scheda Tecnica | MICROCHIP JANTX1N982BUR-1/TR |
| Conformità RoHS | 2 documenti disponibili |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Zener/Single Zener Diodes | |
| Produttore | MICROCHIP | |
| Imballo | DO-35(DO-204AH) | |
| Diode Configuration | 1 Independent | |
| Tolerance | ±5% | |
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Pd - Power Dissipation | 500mW | |
| Reverse Leakage Current (Ir) | 500nA@56V | |
| Impedance(Zzt) | 270Ω | |
| Zener Voltage(Range) | - | |
| Zener Voltage(Nom) | 75V | |
| Impedance(Zzk) | 2kΩ |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Zener/Single Zener Diodes | |
| Produttore | MICROCHIP | |
| Imballo | DO-35(DO-204AH) | |
| Diode Configuration | 1 Independent | |
| Tolerance | ±5% | |
| Operating Junction Temperature Range | -65℃~+175℃ |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 500mW | |
| Reverse Leakage Current (Ir) | 500nA@56V | |
| Impedance(Zzt) | 270Ω | |
| Zener Voltage(Range) | - | |
| Zener Voltage(Nom) | 75V | |
| Impedance(Zzk) | 2kΩ |
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Caratteristiche
Traduzione AI
- JAN, JANTX, and JANTXV versions of 1N962BUR-1 through 1N986BUR-1 available in January
- Leadless surface mount package
- Metallurgical bond construction
- Operating temperature range: -65°C to +175°C
- Storage temperature range: -65°C to +175°C
- DC power dissipation: 500mW at TEC = +125°C
- Power derating: 10mW/°C for TEC > +125°C
- Forward voltage maximum 1.1V at 200mA
- DO-213AA package, hermetic glass case (MELF, SOD-80, LL34)
- Tin/lead lead finish
- Thermal resistance (ROJEC): 100°C/W max at L = 0 inches
- Thermal impedance (ZJX): 35°C/W max
- Polarity: marked (cathode) end positive during diode operation
- Device axial COE approximately +6PPM/°C; mounting surface system COE should match
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 6.6221 | $ 6.62 |
| 200+ | $ 2.5637 | $ 512.74 |
| 500+ | $ 2.4727 | $ 1236.35 |
| 1,000+ | $ 2.4295 | $ 2429.50 |
Package Standard500/Full Box | ||
Prezzo migliore per quantità maggiore?
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Zener/Single Zener Diodes | |
| Produttore | MICROCHIP | |
| Imballo | DO-35(DO-204AH) | |
| Diode Configuration | 1 Independent | |
| Tolerance | ±5% | |
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Pd - Power Dissipation | 500mW | |
| Reverse Leakage Current (Ir) | 500nA@56V | |
| Impedance(Zzt) | 270Ω | |
| Zener Voltage(Range) | - | |
| Zener Voltage(Nom) | 75V | |
| Impedance(Zzk) | 2kΩ |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Zener/Single Zener Diodes | |
| Produttore | MICROCHIP | |
| Imballo | DO-35(DO-204AH) | |
| Diode Configuration | 1 Independent | |
| Tolerance | ±5% | |
| Operating Junction Temperature Range | -65℃~+175℃ |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 500mW | |
| Reverse Leakage Current (Ir) | 500nA@56V | |
| Impedance(Zzt) | 270Ω | |
| Zener Voltage(Range) | - | |
| Zener Voltage(Nom) | 75V | |
| Impedance(Zzk) | 2kΩ |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- JAN, JANTX, and JANTXV versions of 1N962BUR-1 through 1N986BUR-1 available in January
- Leadless surface mount package
- Metallurgical bond construction
- Operating temperature range: -65°C to +175°C
- Storage temperature range: -65°C to +175°C
- DC power dissipation: 500mW at TEC = +125°C
- Power derating: 10mW/°C for TEC > +125°C
- Forward voltage maximum 1.1V at 200mA
- DO-213AA package, hermetic glass case (MELF, SOD-80, LL34)
- Tin/lead lead finish
- Thermal resistance (ROJEC): 100°C/W max at L = 0 inches
- Thermal impedance (ZJX): 35°C/W max
- Polarity: marked (cathode) end positive during diode operation
- Device axial COE approximately +6PPM/°C; mounting surface system COE should match
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |

