MASPOWER MSG20T120HLE0

제조업체	MASPOWERAsian Brands
제조사 품번	MSG20T120HLE0
LCSC 번호	C37635855
포장	TO-263
고객 번호
주요 제원	227W 40A 1.2kV FS (Field Stop) TO-263 Single IGBTs RoHS
데이터시트	MASPOWER MSG20T120HLE0
RoHS 준수	1개 문서 이용 가능

제품 사양

전체

타입	설명
카테고리	Discrete Semiconductors/Transistors/IGBTs/Single IGBTs
제조업체	MASPOWER
포장	TO-263
Td(off)	230ns
Pd - Power Dissipation	227W
Td(on)	100ns
Current - Collector(Ic)	40A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	100pF
IGBT Type	FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	5V@250uA
Operating Temperature	-55℃~+150℃
Vce Saturation(VCE(sat))	2.5V@20A,15V
Collector Cut-Off Current (Ices)	-
Reverse Recovery Time(trr)	240ns
Switching Energy(Eoff)	1.5mJ
Turn-On Energy (Eon)	2.4mJ
Input Capacitance(Cies)	4.67nF
Output Capacitance(Coes)	232pF
Gate Charge(Qg)	160nC@15V

타입	설명
카테고리	Discrete Semiconductors/Transistors/IGBTs/Single IGBTs
제조업체	MASPOWER
포장	TO-263
Td(off)	230ns
Pd - Power Dissipation	227W
Td(on)	100ns
Current - Collector(Ic)	40A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	100pF
IGBT Type	FS (Field Stop)

타입	설명
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	5V@250uA
Operating Temperature	-55℃~+150℃
Vce Saturation(VCE(sat))	2.5V@20A,15V
Collector Cut-Off Current (Ices)	-
Reverse Recovery Time(trr)	240ns
Switching Energy(Eoff)	1.5mJ
Turn-On Energy (Eon)	2.4mJ
Input Capacitance(Cies)	4.67nF
Output Capacitance(Coes)	232pF
Gate Charge(Qg)	160nC@15V

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전체

타입	설명
카테고리	Discrete Semiconductors/Transistors/IGBTs/Single IGBTs
제조업체	MASPOWER
포장	TO-263
Td(off)	230ns
Pd - Power Dissipation	227W
Td(on)	100ns
Current - Collector(Ic)	40A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	100pF
IGBT Type	FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	5V@250uA
Operating Temperature	-55℃~+150℃
Vce Saturation(VCE(sat))	2.5V@20A,15V
Collector Cut-Off Current (Ices)	-
Reverse Recovery Time(trr)	240ns
Switching Energy(Eoff)	1.5mJ
Turn-On Energy (Eon)	2.4mJ
Input Capacitance(Cies)	4.67nF
Output Capacitance(Coes)	232pF
Gate Charge(Qg)	160nC@15V

타입	설명
카테고리	Discrete Semiconductors/Transistors/IGBTs/Single IGBTs
제조업체	MASPOWER
포장	TO-263
Td(off)	230ns
Pd - Power Dissipation	227W
Td(on)	100ns
Current - Collector(Ic)	40A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	100pF
IGBT Type	FS (Field Stop)

타입	설명
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	5V@250uA
Operating Temperature	-55℃~+150℃
Vce Saturation(VCE(sat))	2.5V@20A,15V
Collector Cut-Off Current (Ices)	-
Reverse Recovery Time(trr)	240ns
Switching Energy(Eoff)	1.5mJ
Turn-On Energy (Eon)	2.4mJ
Input Capacitance(Cies)	4.67nF
Output Capacitance(Coes)	232pF
Gate Charge(Qg)	160nC@15V