Infineon IDK08G65C5XTMA2

ThinQ!™ Generation 5 represents leading edge technology for the SiC Schottky Barrier diodes. The proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc×Vf). The new thinQ!™ Generation 5 has been designed to complement the 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.

• Revolutionary semiconductor material - Silicon Carbide
• Benchmark switching behavior
• No reverse recovery/ No forward recovery
• Temperature independent switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 18 mA2)
• Optimized for high temperature operation

• Switch mode power supply
• Power factor correction
• Solar inverter
• Uninterruptible power supply