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EDA-ModelleEasyEDA
onsemi FCD360N65S3R0
| Hersteller | |
| Herst.-Teilenr. | FCD360N65S3R0 |
| LCSC-Nr. | C352882 |
| Verp. | TO-252 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 650V 10A TO-252 |
| Datenblatt | onsemi FCD360N65S3R0 |
| RoHS-Konformität | 2 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 20W | |
| RDS(on) | 360mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 730pF | |
| Gate Charge(Qg) | 18nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 20W | |
| RDS(on) | 360mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 730pF | |
| Gate Charge(Qg) | 18nC@10V | |
| Type | N-Channel |
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Beschreibung
KI-Übersetzung
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
Merkmale
KI-Übersetzung
- 700V @ TJ = 150°C
- Typ. RDS(on) = 310 mΩ
- Ultra Low Gate Charge (Typ. Qg = 18 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 173 pF)
- 100% Avalanche Tested
- These Devices are Pb−Free and are RoHS Compliant
Anwendungen
KI-Übersetzung
- Computing / Display Power Supplies
- Telecom / Server Power Supplies
- Industrial Power Supplies
- Lighting / Charger / Adapter
Vorrätig: 1
1 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 2.7775 | $ 2.78 |
| 10+ | $ 2.3793 | $ 23.79 |
| 30+ | $ 2.1303 | $ 63.91 |
| 100+ | $ 1.8754 | $ 187.54 |
| 500+ | $ 1.7607 | $ 880.35 |
| 1,000+ | $ 1.7094 | $ 1709.40 |
Standardgehäuse2500/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 20W | |
| RDS(on) | 360mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 730pF | |
| Gate Charge(Qg) | 18nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 20W | |
| RDS(on) | 360mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 730pF | |
| Gate Charge(Qg) | 18nC@10V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
Merkmale
KI-Übersetzung
- 700V @ TJ = 150°C
- Typ. RDS(on) = 310 mΩ
- Ultra Low Gate Charge (Typ. Qg = 18 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 173 pF)
- 100% Avalanche Tested
- These Devices are Pb−Free and are RoHS Compliant
Anwendungen
KI-Übersetzung
- Computing / Display Power Supplies
- Telecom / Server Power Supplies
- Industrial Power Supplies
- Lighting / Charger / Adapter
C352882 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| NVD360N65S3T4G | onsemi | DPAK | 6 | $ 2.2242 | ||
| TPD65R380D | WUXI UNIGROUP MICRO | TO-252 | 16 | $ 0.6367 | ||
| OSD65R380 | OSEN | TO-252 | 475 | $ 0.6699 | ||
| RS65R380BD | REASUNOS | TO-252 | 2,090 | $0.3629 $0.382 | ||
| CRJD390N65GC | CRMICRO | TO-252 | 2,431 | $ 0.6303 | ||
| XR65R250G2 | XNRUSEMI | TO-252-3L | 1,505 | $ 0.4304 | ||
| RS65T360D | REASUNOS | TO-252 | 1,176 | $0.5556 $0.5848 | ||
| NCE65T360K | NCE | TO-252 | 2,321 | $ 0.9537 | ||
| STD16N65M2 | ST | DPAK | 0 | $ 1.0431 | ||
| PJMD390N65EC_L2_00001 | PANJIT | TO-252AA | 0 | $ 1.5698 |