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onsemi FCH040N65S3
| Producent | |
| Nr części prod. | FCH040N65S3 |
| Nr LCSC | C348546 |
| Opak. | TO-247-3 |
| Numer Klienta | |
| Klucz. cechy | 650V 65A 4.5V 20W 40mΩ@10V 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs |
| Karta Katalogowa | onsemi FCH040N65S3 |
| Części alternatywne | 10 |
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | TO-247-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 65A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 20W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 40mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.74nF | |
| Gate Charge(Qg) | 136nC@10V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | TO-247-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 65A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 20W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 40mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.74nF | |
| Gate Charge(Qg) | 136nC@10V | |
| Type | N-Channel |
Opis
SUPERFET III MOSFET is onsemi's new high-voltage super junction (SJ) MOSFET series utilizing charge balance technology, featuring excellent low on-resistance and low gate charge performance. This advanced technology is designed to minimize conduction losses, deliver superior switching performance, and withstand extremely high dv/dt rates. As a result, the SUPERFET III MOSFET Easy Drive series helps address EMI issues, making design implementation simpler and more straightforward.
Funkcje
- 700 V @ TJ = 150°C
- Typical RDS(on) = 35.4 mΩ
- Ultra-low gate charge (typical Qg = 136 nC)
- Low effective output capacitance (typical Coss(eff.) = 1154 pF)
- 100% avalanche tested
- Lead-free and RoHS compliant
Zastosowania
- Telecom/Server Power Supplies - Industrial Power Supplies - Uninterruptible Power Supplies (UPS)/Solar
| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 8.0029 | $ 8.00 |
| 10+ | $ 7.8973 | $ 78.97 |
| 30+ | $ 7.8259 | $ 234.78 |
| 90+ | $ 7.756 | $ 698.04 |
Standardowa Obudowa30/Full Reel | ||
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | TO-247-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 65A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 20W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 40mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.74nF | |
| Gate Charge(Qg) | 136nC@10V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | TO-247-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 65A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 20W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 40mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.74nF | |
| Gate Charge(Qg) | 136nC@10V | |
| Type | N-Channel |
Opis
SUPERFET III MOSFET is onsemi's new high-voltage super junction (SJ) MOSFET series utilizing charge balance technology, featuring excellent low on-resistance and low gate charge performance. This advanced technology is designed to minimize conduction losses, deliver superior switching performance, and withstand extremely high dv/dt rates. As a result, the SUPERFET III MOSFET Easy Drive series helps address EMI issues, making design implementation simpler and more straightforward.
Funkcje
- 700 V @ TJ = 150°C
- Typical RDS(on) = 35.4 mΩ
- Ultra-low gate charge (typical Qg = 136 nC)
- Low effective output capacitance (typical Coss(eff.) = 1154 pF)
- 100% avalanche tested
- Lead-free and RoHS compliant
Zastosowania
- Telecom/Server Power Supplies - Industrial Power Supplies - Uninterruptible Power Supplies (UPS)/Solar
C348546 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| FCH040N65S3-F155 | onsemi | TO-247-3 | 33 | $ 11.8658 | ||
| STW70N65DM6 | ST | TO-247 | 6 | $ 27.5216 | ||
| STWA70N65DM6 | ST | TO-247 | 3 | $ 41.9949 | ||
| APC65R040WMF | ALLPOWER | TO-247 | 1,000 | $ 10.1308 | ||
| STW70N60M2 | ST | TO-247 | 1 | $ 3.7069 | ||
| STWA75N65DM6 | ST | TO-247 | 1 | $ 19.3094 | ||
| NTHL019N65S3H | onsemi | TO-247 | 2 | $ 28.7234 | ||
| NTHL040N65S3F | onsemi | TO-247-3 | 10 | $ 27.4367 | ||
| FCH029N65S3-F155 | onsemi | TO-247-3 | 0 | $ 27.0354 | ||
| NVH040N65S3F | onsemi | TO-247-3 | 0 | $ 32.707 |