- Pinout
- Footprint
Immagini a scopo illustrativo
Modelli EDAEasyEDA
onsemi FDMC6686P
| Produttore | |
| Cod. Prod. | FDMC6686P |
| Cod. LCSC | C348535 |
| Imballo | PQFN-8(3.3x3.3) |
| Numero Cliente | |
| Attr. chiave | MOSFET P-CH 20V 56A PQFN-8(3.3x3.3) |
| Scheda Tecnica | onsemi FDMC6686P |
| Conformità RoHS | 4 documenti disponibili |
| Parti alternative | 9 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | PQFN-8(3.3x3.3) | |
| Output Capacitance(Coss) | 2.28nF | |
| Pd - Power Dissipation | 40W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 56A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.01nF | |
| RDS(on) | 11.5mΩ@1.8V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 13.2nF | |
| Gate Charge(Qg) | 122nC@4.5V | |
| Vgs | ±8V | |
| Type | P-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | PQFN-8(3.3x3.3) | |
| Output Capacitance(Coss) | 2.28nF | |
| Pd - Power Dissipation | 40W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 56A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.01nF | |
| RDS(on) | 11.5mΩ@1.8V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 13.2nF | |
| Gate Charge(Qg) | 122nC@4.5V | |
| Vgs | ±8V | |
| Type | P-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(ON), switching performance and ruggedness.
Caratteristiche
Traduzione AI
- Max rDS(on)=4 mΩ at VGS=-4.5 V, ID=-18 A
- Max rDS(on)=5.7 mΩ at VGS=-2.5 V, ID=-16 A
- Max rDS(on)=11.5 mΩ at VGS=-1.8 V, ID=-11 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used surface mount package
- Lead-free and RoHS Compliant
Applicazioni
Traduzione AI
- Load Switch
- Battery Management
- Power Management
- Reverse Polarity Protection
Disponibile: 13
13 Pronta consegna
Discontinuo
Esaurite le scorte, il prodotto risulterà "Non disponibile".
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 1.6405 | $ 1.64 |
| 10+ | $ 1.3788 | $ 13.79 |
| 30+ | $ 1.2152 | $ 36.46 |
| 100+ | $ 1.0469 | $ 104.69 |
| 500+ | $ 0.9706 | $ 485.30 |
| 1,000+ | $ 0.9379 | $ 937.90 |
Package Standard3000/Full Reel | ||
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | PQFN-8(3.3x3.3) | |
| Output Capacitance(Coss) | 2.28nF | |
| Pd - Power Dissipation | 40W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 56A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.01nF | |
| RDS(on) | 11.5mΩ@1.8V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 13.2nF | |
| Gate Charge(Qg) | 122nC@4.5V | |
| Vgs | ±8V | |
| Type | P-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | PQFN-8(3.3x3.3) | |
| Output Capacitance(Coss) | 2.28nF | |
| Pd - Power Dissipation | 40W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 56A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.01nF | |
| RDS(on) | 11.5mΩ@1.8V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 13.2nF | |
| Gate Charge(Qg) | 122nC@4.5V | |
| Vgs | ±8V | |
| Type | P-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(ON), switching performance and ruggedness.
Caratteristiche
Traduzione AI
- Max rDS(on)=4 mΩ at VGS=-4.5 V, ID=-18 A
- Max rDS(on)=5.7 mΩ at VGS=-2.5 V, ID=-16 A
- Max rDS(on)=11.5 mΩ at VGS=-1.8 V, ID=-11 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used surface mount package
- Lead-free and RoHS Compliant
Applicazioni
Traduzione AI
- Load Switch
- Battery Management
- Power Management
- Reverse Polarity Protection
C348535 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| HSCE1218 | HUASHUO | DFN-8(3.3x3.3) | 2,770 | $ 0.3546 | ||
| HSCE2631 | HUASHUO | DFN-8(3.3x3.3) | 2,305 | $ 0.626 | ||
| JMTQ55P02A | Jiangsu JieJie Microelectronics | PDFN3.3x3.3-8L | 2,095 | $ 0.1193 | ||
| XR60P02D | XNRUSEMI | PDFN3333-8L | 4,035 | $0.0986 $0.1037 | ||
| DMP2005UFG-13 | DIODES | PowerDI3333-8 | 329 | $ 1.1064 | ||
| WSD20L75DN33 | Winsok Semicon | DFN-8(3.3x3.3) | 5,138 | $0.3925 $0.4361 | ||
| SKQ55P02AD | Shikues | DFN-8(3.3x3.3) | 0 | $ 0.2048 | ||
| SISS61DN-T1-GE3 | VISHAY | PowerPAK1212-8S | 0 | $ 1.4216 | ||
| DMP26M1UFG-13 | DIODES | PowerDI3333-8 | 0 | $ 0.7319 |