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ROHM R6011ENX
| 제조업체 | |
| 제조사 품번 | R6011ENX |
| LCSC 번호 | C3290602 |
| 포장 | TO-220FM |
| 고객 번호 | |
| 주요 제원 | MOSFET N-CH 600V 11A TO-220FM |
| 데이터시트 | ROHM R6011ENX |
| RoHS 준수 | 2개 문서 이용 가능 |
| 대체 부품 | 10 |
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | ROHM | |
| 포장 | TO-220FM | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 570pF | |
| Current - Continuous Drain(Id) | 11A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 53W | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| RDS(on) | 390mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 670pF | |
| Gate Charge(Qg) | 32nC@10V |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | ROHM | |
| 포장 | TO-220FM | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 570pF | |
| Current - Continuous Drain(Id) | 11A |
| 타입 | 설명 | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 53W | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| RDS(on) | 390mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 670pF | |
| Gate Charge(Qg) | 32nC@10V |
개요
These N-channel enhancement-mode power MOSFETs are manufactured using Fairchild Semiconductor's proprietary planar stripe DMOS technology. This advanced technology is specially designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency switching DC/DC converters and switched-mode power supplies.
주요 특징
- Low on-resistance
- Fast switching
- Drive circuits can be simple
- Parallel use is easy
- Pb-free plating ; RoHS compliant
응용 분야
- Switching
| 수량 | 단가(참고용) | 총액 |
|---|---|---|
| 1+ | $ 5.3954 | $ 5.40 |
| 10+ | $ 5.3061 | $ 53.06 |
| 30+ | $ 5.2476 | $ 157.43 |
| 100+ | $ 5.1891 | $ 518.91 |
표준 패키지500/Full Bag | ||
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | ROHM | |
| 포장 | TO-220FM | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 570pF | |
| Current - Continuous Drain(Id) | 11A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 53W | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| RDS(on) | 390mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 670pF | |
| Gate Charge(Qg) | 32nC@10V |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | ROHM | |
| 포장 | TO-220FM | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 570pF | |
| Current - Continuous Drain(Id) | 11A |
| 타입 | 설명 | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 53W | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| RDS(on) | 390mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 670pF | |
| Gate Charge(Qg) | 32nC@10V |
개요
These N-channel enhancement-mode power MOSFETs are manufactured using Fairchild Semiconductor's proprietary planar stripe DMOS technology. This advanced technology is specially designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency switching DC/DC converters and switched-mode power supplies.
주요 특징
- Low on-resistance
- Fast switching
- Drive circuits can be simple
- Parallel use is easy
- Pb-free plating ; RoHS compliant
응용 분야
- Switching
C3290602 EasyEDA 라이브러리
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
대체 부품
| MPN | 제조사 | 포장 | 재고 현황 | 단가 | ||
|---|---|---|---|---|---|---|
| CMF13N65 | Cmos | TO-220F | 155 | $0.5217 $0.5491 | ||
| SVF12N65F | Hangzhou Silan Microelectronics | TO-220F | 3,071 | $ 0.7028 | ||
| BRFL20N65 | BLUE ROCKET | TO-220FL | 682 | $ 0.6093 | ||
| SVF12N60F | Hangzhou Silan Microelectronics | TO-220F-3 | 83 | $ 1.0674 | ||
| R6011ENXC7 | ROHM | TO-220FM | 0 | $ 2.4159 | ||
| R6011ENXC7G | ROHM | TO-220FM | 0 | $ 0.6106 | ||
| R6511ENXC7G | ROHM | TO-220FM | 0 | $ 1.3685 | ||
| IXFP12N65X2M | Littelfuse/IXYS | TO-220 | 0 | $ 7.2085 | ||
| AGM65R380F | AGMSEMI | TO-220F | 0 | $ 1.0431 | ||
| VBMB165R11S | VBsemi Elec | TO-220F | 0 | $ 1.5427 |