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EDA-ModelleEasyEDA
Nexperia NX138AKMYL
| Hersteller | |
| Herst.-Teilenr. | NX138AKMYL |
| LCSC-Nr. | C3290147 |
| Verp. | SOT-883 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 60V 0.27A SOT-883 |
| Datenblatt | Nexperia NX138AKMYL |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Nexperia | |
| Verp. | SOT-883 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 2pF | |
| Current - Continuous Drain(Id) | 270mA | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 2.3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.3pF | |
| RDS(on) | 4.2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 15pF | |
| Gate Charge(Qg) | 600pC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Nexperia | |
| Verp. | SOT-883 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 2pF | |
| Current - Continuous Drain(Id) | 270mA | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 2.3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.3pF | |
| RDS(on) | 4.2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 15pF | |
| Gate Charge(Qg) | 600pC@10V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless, ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Merkmale
KI-Übersetzung
- Logic-level compatible
- Very fast switching
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection
Anwendungen
KI-Übersetzung
- Relaydriver
- High-speed line driver
- Low-side load switch
- Switching circuits
Nicht vorrätig
Benachrichtigen
Minimum: 10Vielfaches: 10Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 10+ | $ 0.0466 | $ 0.47 |
| 100+ | $ 0.0459 | $ 4.59 |
| 300+ | $ 0.0454 | $ 13.62 |
| 1,000+ | $ 0.0433 | $ 43.30 |
Standardgehäuse10000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Nexperia | |
| Verp. | SOT-883 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 2pF | |
| Current - Continuous Drain(Id) | 270mA | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 2.3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.3pF | |
| RDS(on) | 4.2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 15pF | |
| Gate Charge(Qg) | 600pC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Nexperia | |
| Verp. | SOT-883 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 2pF | |
| Current - Continuous Drain(Id) | 270mA | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 2.3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.3pF | |
| RDS(on) | 4.2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 15pF | |
| Gate Charge(Qg) | 600pC@10V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless, ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Merkmale
KI-Übersetzung
- Logic-level compatible
- Very fast switching
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection
Anwendungen
KI-Übersetzung
- Relaydriver
- High-speed line driver
- Low-side load switch
- Switching circuits
C3290147 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| HSBG2N7002K | HUASHUO | DFN1006-3 | 180 | $ 0.0266 | ||
| 2N7002KN3T5G | MSKSEMI | SOT-883 | 12,560 | $ 0.0323 | ||
| BRCS7002K2ZK | BLUE ROCKET | DFN1006-3L | 8,090 | $ 0.0587 | ||
| SSM3K72KCT,L3F | TOSHIBA | CST-3 | 250 | $ 0.1016 | ||
| HL7002KD | R+O | DFN1006-3L | 9,560 | $ 0.0234 | ||
| TPNX7002BKMBYL | TECH PUBLIC | DFN1006-3L | 12,540 | $0.0325 $0.0342 | ||
| TPWNM3025-3/TR | TECH PUBLIC | DFN1006-3L | 6,420 | $ 0.0349 | ||
| TPNX7002BKMYL | TECH PUBLIC | DFN1006-3L | 2,300 | $0.0319 $0.0335 | ||
| NX138BKMYL | Nexperia | SOT-883 | 0 | $ 0.1094 | ||
| 2N7002BKMB,315 | Nexperia | SOT-883B | 0 | $ 0.028 |