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Infineon IPA075N15N3GXKSA1

제조업체
제조사 품번
IPA075N15N3GXKSA1
LCSC 번호
C3289014
포장
TO-220-FP
고객 번호
주요 제원
39W 150V 43A 4V 7.5mΩ@10V 1 N-channel N-Channel TO-220-FP Single FETs, MOSFETs RoHS
데이터시트Infineon IPA075N15N3GXKSA1
RoHS 준수1개 문서 이용 가능
대체 부품10
품절
재입고 알림
최소값: 1배수: 1판매 단위: Piece
BOM 목록에 추가
수량단가(참고용)총액
1+$ 7.4392$ 7.44
10+$ 7.3271$ 73.27
30+$ 7.2524$ 217.57
100+$ 7.1776$ 717.76
표준 패키지50/Full Tube
수량이 많을수록 더 좋은 가격?
$

제품 사양

전체
타입설명
카테고리Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
제조업체Infineon
포장TO-220-FP
Output Capacitance(Coss)849pF
Pd - Power Dissipation39W
Configuration-
Drain to Source Voltage150V
Operating Temperature-55℃~+175℃
Current - Continuous Drain(Id)43A
Gate Threshold Voltage (Vgs(th))4V
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)7.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.28nF
Gate Charge(Qg)93nC@10V
Vgs±20V
TypeN-Channel
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개요

AI 번역

The latest 650 V CoolMOS™ CFD7 expands the CFD7 series voltage range and serves as the successor to the 650 V CoolMOS™ CFD2. With improved switching performance and excellent thermal characteristics, the 650 V CoolMOS™ CFD7 achieves maximum efficiency in resonant switching topologies such as LLC and phase-shifted full bridge (ZVS). As part of Infineon's fast body diode portfolio, this new product family combines all the advantages of fast switching technology with outstanding hard commutation robustness. CoolMOS™ CFD7 technology meets the highest standards for efficiency and reliability while enabling high power density solutions.

주요 특징

AI 번역
  • Ultra-low on-resistance RDS(ON)
  • Operating temperature up to 175℃
  • Lead-free lead finish; RoHS compliant
  • Qualified per JEDEC standards for target applications
  • Ideal for high-frequency switching and synchronous rectification
  • Halogen-free per IEC61249-2-21

응용 분야

AI 번역
  • Optimized for phase-shifted full-bridge (ZVS) and LLC applications - Server, telecom, EV charging, solar

대체 부품

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