VISHAY IRF740LCPBF-BE3
| Hersteller | |
| Herst.-Teilenr. | IRF740LCPBF-BE3 |
| LCSC-Nr. | C3280683 |
| Verp. | TO-220AB |
| Kundennummer | |
| Hauptmerkm. | 400V 10A 4V 125W 550mΩ@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs |
| Datenblatt | VISHAY IRF740LCPBF-BE3 |
| Alternativteile | 10 |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VISHAY | |
| Verp. | TO-220AB | |
| Drain to Source Voltage | 400V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 190pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF | |
| RDS(on) | 550mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.1nF | |
| Gate Charge(Qg) | 39nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VISHAY | |
| Verp. | TO-220AB | |
| Drain to Source Voltage | 400V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 190pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF | |
| RDS(on) | 550mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.1nF | |
| Gate Charge(Qg) | 39nC@10V | |
| Type | N-Channel |
Beschreibung
This new low-charge power MOSFET series significantly reduces gate charge compared to conventional MOSFETs. Leveraging new LCDMOS technology, it achieves improved device performance without increasing product cost, reduces gate drive requirements, and lowers overall system cost. Furthermore, in various high-frequency applications, it enables lower switching losses and higher efficiency. Using this new low-charge MOSFET, achieving frequencies of several MHz at high currents is feasible. These improvements in device performance, combined with the proven durability and reliability of power MOSFETs, set a new standard for power transistors in switching applications.
Merkmale
- Ultra-low gate charge
- Reduced gate drive requirements
- Enhanced 30 V VGS rating
- Low Ciss, Coss, Crss
- Extremely high frequency operation
- Repetitive avalanche rated
Anwendungen
- Server and telecom power supplies
- Switch Mode Power Supplies (SMPS)
- Power Factor Correction (PFC)
- Lighting
- High Intensity Discharge (HID) lamps
- Fluorescent ballast lighting
- Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Renewable energy
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.9843 | $ 1.98 |
| 200+ | $ 0.7685 | $ 153.70 |
| 500+ | $ 0.7422 | $ 371.10 |
| 1,000+ | $ 0.7283 | $ 728.30 |
Standardgehäuse50/Full Tube | ||
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VISHAY | |
| Verp. | TO-220AB | |
| Drain to Source Voltage | 400V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 190pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF | |
| RDS(on) | 550mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.1nF | |
| Gate Charge(Qg) | 39nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VISHAY | |
| Verp. | TO-220AB | |
| Drain to Source Voltage | 400V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 190pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF | |
| RDS(on) | 550mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.1nF | |
| Gate Charge(Qg) | 39nC@10V | |
| Type | N-Channel |
Beschreibung
This new low-charge power MOSFET series significantly reduces gate charge compared to conventional MOSFETs. Leveraging new LCDMOS technology, it achieves improved device performance without increasing product cost, reduces gate drive requirements, and lowers overall system cost. Furthermore, in various high-frequency applications, it enables lower switching losses and higher efficiency. Using this new low-charge MOSFET, achieving frequencies of several MHz at high currents is feasible. These improvements in device performance, combined with the proven durability and reliability of power MOSFETs, set a new standard for power transistors in switching applications.
Merkmale
- Ultra-low gate charge
- Reduced gate drive requirements
- Enhanced 30 V VGS rating
- Low Ciss, Coss, Crss
- Extremely high frequency operation
- Repetitive avalanche rated
Anwendungen
- Server and telecom power supplies
- Switch Mode Power Supplies (SMPS)
- Power Factor Correction (PFC)
- Lighting
- High Intensity Discharge (HID) lamps
- Fluorescent ballast lighting
- Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Renewable energy
C3280683 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| IRF740LCPBF | VISHAY | TO-220AB | 5 | $ 2.8009 | ||
| UF740L-TA3-T | UTC | TO-220 | 11 | $ 0.9716 | ||
| IRF740 | BLUE ROCKET | TO-220 | 796 | $ 0.706 | ||
| WGP11N40 | Wild Goose | TO-220 | 978 | $ 0.2626 | ||
| FQP11N40C | onsemi | TO-220 | 1 | $ 3.5025 | ||
| CS740A8H | Wuxi China Resources Huajing Microelectronics | TO-220AB | 1 | $ 0.602 | ||
| WGP12N60S | Wild Goose | TO-220 | 101 | $ 0.4912 | ||
| IRF740PBF | VISHAY | TO-220AB | 38,640 | $ 0.7295 | ||
| WGP10N60S | Wild Goose | TO-220 | 255 | $ 0.3532 | ||
| STP15NM60ND | ST | TO-220 | 0 | $ 6.4287 |