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EDA-ModelleEasyEDA
onsemi FDME905PT
| Hersteller | |
| Herst.-Teilenr. | FDME905PT |
| LCSC-Nr. | C328028 |
| Verp. | SMD |
| Kundennummer | |
| Hauptmerkm. | P-Channel MOSFET, Current: -8A, Breakdown Voltage: -12V |
| Datenblatt | onsemi FDME905PT |
| RoHS-Konformität | 4 Dokumente verfügbar |
| Alternativteile | 2 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | SMD | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 12V | |
| Output Capacitance(Coss) | 525pF | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 2.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 465pF | |
| RDS(on) | 97mΩ@1.8V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.315nF | |
| Gate Charge(Qg) | 20nC@4.5V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | SMD | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 12V | |
| Output Capacitance(Coss) | 525pF | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 2.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 465pF | |
| RDS(on) | 97mΩ@1.8V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.315nF | |
| Gate Charge(Qg) | 20nC@4.5V | |
| Type | P-Channel |
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Beschreibung
KI-Übersetzung
This device is designed for battery charging or load switching in cellular phones and other ultra-portable applications. It incorporates MOSFETs with low on-resistance. The MicroFET 1.6x1.6 Thin package offers excellent thermal performance for its physical footprint, making it ideal for switching and linear mode applications.
Merkmale
KI-Übersetzung
- Maximum rDS(on) = 22 mΩ at VGS = -4.5 V, ID = -8 A
- Maximum rDS(on) = 26 mΩ at VGS = -2.5 V, ID = -7.3 A
- Maximum rDS(on) = 97 mΩ at VGS = -1.8 V, ID = -3.8 A
- Low profile: new MicroFET 1.6x1.6 Thin package with maximum thickness of 0.55 mm
- Halogen-free and antimony oxide-free
- RoHS compliant
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Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.2978 | $ 0.30 |
| 10+ | $ 0.2917 | $ 2.92 |
| 30+ | $ 0.2871 | $ 8.61 |
| 100+ | $ 0.284 | $ 28.40 |
Standardgehäuse5000/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | SMD | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 12V | |
| Output Capacitance(Coss) | 525pF | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 2.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 465pF | |
| RDS(on) | 97mΩ@1.8V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.315nF | |
| Gate Charge(Qg) | 20nC@4.5V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | SMD | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 12V | |
| Output Capacitance(Coss) | 525pF | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 2.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 465pF | |
| RDS(on) | 97mΩ@1.8V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.315nF | |
| Gate Charge(Qg) | 20nC@4.5V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This device is designed for battery charging or load switching in cellular phones and other ultra-portable applications. It incorporates MOSFETs with low on-resistance. The MicroFET 1.6x1.6 Thin package offers excellent thermal performance for its physical footprint, making it ideal for switching and linear mode applications.
Merkmale
KI-Übersetzung
- Maximum rDS(on) = 22 mΩ at VGS = -4.5 V, ID = -8 A
- Maximum rDS(on) = 26 mΩ at VGS = -2.5 V, ID = -7.3 A
- Maximum rDS(on) = 97 mΩ at VGS = -1.8 V, ID = -3.8 A
- Low profile: new MicroFET 1.6x1.6 Thin package with maximum thickness of 0.55 mm
- Halogen-free and antimony oxide-free
- RoHS compliant
C328028 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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