- Rozmieszczenie wyprowadzeń
- Footprint
Zdjęcia poglądowe
Modele EDAEasyEDA
Infineon IPP339N20NM6AKSA1
| Producent | |
| Nr części prod. | IPP339N20NM6AKSA1 |
| Nr LCSC | C29699796 |
| Opak. | TO-220-3 |
| Numer Klienta | |
| Klucz. cechy | MOSFET N-CH 200V 39A TO-220-3 |
| Karta Katalogowa | Infineon IPP339N20NM6AKSA1 |
| Zgodność z RoHS | 1 dokumentów dostępnych |
| Części alternatywne | 10 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | TO-220-3 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 250pF | |
| Current - Continuous Drain(Id) | 39A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF | |
| RDS(on) | 33.9mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.6nF | |
| Gate Charge(Qg) | 24nC@10V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | TO-220-3 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 250pF | |
| Current - Continuous Drain(Id) | 39A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF | |
| RDS(on) | 33.9mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.6nF | |
| Gate Charge(Qg) | 24nC@10V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- N-channel, normal level
- Very low on-resistance Rps(on)
- Excellent gate charge × Ros(on) product (FOM)
- Very low reverse recovery charge (Qrr)
- High avalanche energy rating 175°C operating temperature
- Pb-free lead plating; RoHS compliant
- Halogen-free according to IEC61249-2-21
- MSL 1 classified according to J-STD-020 100% avalanche tested
Na stanie: 75
75 W magazynie, wysyłka natychmiastowa
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 1+ | $ 2.8256 | $ 2.83 |
| 10+ | $ 2.3913 | $ 23.91 |
| 50+ | $ 2.1192 | $ 105.96 |
| 100+ | $ 1.8406 | $ 184.06 |
| 500+ | $ 1.7144 | $ 857.20 |
| 1,000+ | $ 1.6603 | $ 1660.30 |
Standardowa Obudowa50/Full Tube | ||
Lepsza cena za większą ilość?
$
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | TO-220-3 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 250pF | |
| Current - Continuous Drain(Id) | 39A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF | |
| RDS(on) | 33.9mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.6nF | |
| Gate Charge(Qg) | 24nC@10V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | TO-220-3 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 250pF | |
| Current - Continuous Drain(Id) | 39A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF | |
| RDS(on) | 33.9mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.6nF | |
| Gate Charge(Qg) | 24nC@10V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- N-channel, normal level
- Very low on-resistance Rps(on)
- Excellent gate charge × Ros(on) product (FOM)
- Very low reverse recovery charge (Qrr)
- High avalanche energy rating 175°C operating temperature
- Pb-free lead plating; RoHS compliant
- Halogen-free according to IEC61249-2-21
- MSL 1 classified according to J-STD-020 100% avalanche tested
C29699796 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| SUP90140E-GE3 | VISHAY | TO-220AB | 10 | $ 4.8187 | ||
| IPP220N25NFDAKSA1-VB | VBsemi Elec | TO-220AB | 5 | $3.4805 $4.0947 | ||
| IRFB4227PBF-VB | VBsemi Elec | TO-220AB | 10 | $1.4329 $1.5083 | ||
| FDP61N20-VB | VBsemi Elec | TO-220AB | 8 | $2.5658 $3.0185 | ||
| IRFB4127PBF-VB | VBsemi Elec | TO-220AB | 5 | $1.4323 $1.5076 | ||
| SUP90142E-GE3 | VISHAY | TO-220AB-3 | 0 | $ 3.1063 | ||
| IPP110N20N3 G-VB | VBsemi Elec | TO-220AB | 0 | $3.5756 $3.7637 | ||
| VBGM1201N | VBsemi Elec | TO-220 | 0 | $ 6.5894 | ||
| VBM1202N | VBsemi Elec | TO-220AB | 0 | $ 3.3471 | ||
| SUP10250E-GE3 | VISHAY | TO-220-3 | 0 | $ 1.4655 |