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XIN FEI HONG FH3419A
| Producent | XIN FEI HONGAsian Brands |
| Nr części prod. | FH3419A |
| Nr LCSC | C2929031 |
| Opak. | SOT-23-3L |
| Numer Klienta | |
| Klucz. cechy | MOSFET P-CH 30V 6.5A SOT-23-3L |
| Karta Katalogowa | XIN FEI HONG FH3419A |
| Części alternatywne | 2 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | XIN FEI HONG | |
| Opak. | SOT-23-3L | |
| Output Capacitance(Coss) | 207pF | |
| Pd - Power Dissipation | 1.25W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 6.5A | |
| Gate Threshold Voltage (Vgs(th)) | 1.9V | |
| Reverse Transfer Capacitance (Crss@Vds) | 136pF | |
| RDS(on) | 26mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.38nF | |
| Gate Charge(Qg) | 30nC@10V | |
| Vgs | ±25V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | XIN FEI HONG | |
| Opak. | SOT-23-3L | |
| Output Capacitance(Coss) | 207pF | |
| Pd - Power Dissipation | 1.25W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 6.5A |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.9V | |
| Reverse Transfer Capacitance (Crss@Vds) | 136pF | |
| RDS(on) | 26mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.38nF | |
| Gate Charge(Qg) | 30nC@10V | |
| Vgs | ±25V | |
| Type | P-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
FH3419A is a P-channel enhancement-mode MOSFET fabricated using trench technology, housed in a plastic SOT-23-3L package.
Funkcje
Tłumaczenie AI
- VDS = -30V
- ID = -6.5A
- RDS(ON)(typ) = 15 mΩ @ VGS = -10V
- RDS(ON)(typ) = 19 mΩ @ VGS = -4.5V
- RDS(ON)(typ) = 18 mΩ @ VGS = -5.0V
- Logic level compatible
- SMD package (SOT-23-3L)
- Trench technology
- Fast switching
Zastosowania
Tłumaczenie AI
- High-speed switching
- DC-DC converters
- Li-ion batteries
Na stanie: 2,160
2,160 W magazynie, wysyłka natychmiastowa
Minimum: 5Wielokrotność: 5Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 5+ | $ 0.1181 | $ 0.59 |
| 50+ | $ 0.0931 | $ 4.66 |
| 150+ | $ 0.0805 | $ 12.08 |
| 500+ | $ 0.0711 | $ 35.55 |
| 3,000+ | $ 0.0592 | $ 177.60 |
| 6,000+ | $ 0.0554 | $ 332.40 |
Standardowa Obudowa3000/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | XIN FEI HONG | |
| Opak. | SOT-23-3L | |
| Output Capacitance(Coss) | 207pF | |
| Pd - Power Dissipation | 1.25W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 6.5A | |
| Gate Threshold Voltage (Vgs(th)) | 1.9V | |
| Reverse Transfer Capacitance (Crss@Vds) | 136pF | |
| RDS(on) | 26mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.38nF | |
| Gate Charge(Qg) | 30nC@10V | |
| Vgs | ±25V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | XIN FEI HONG | |
| Opak. | SOT-23-3L | |
| Output Capacitance(Coss) | 207pF | |
| Pd - Power Dissipation | 1.25W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 6.5A |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.9V | |
| Reverse Transfer Capacitance (Crss@Vds) | 136pF | |
| RDS(on) | 26mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.38nF | |
| Gate Charge(Qg) | 30nC@10V | |
| Vgs | ±25V | |
| Type | P-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
FH3419A is a P-channel enhancement-mode MOSFET fabricated using trench technology, housed in a plastic SOT-23-3L package.
Funkcje
Tłumaczenie AI
- VDS = -30V
- ID = -6.5A
- RDS(ON)(typ) = 15 mΩ @ VGS = -10V
- RDS(ON)(typ) = 19 mΩ @ VGS = -4.5V
- RDS(ON)(typ) = 18 mΩ @ VGS = -5.0V
- Logic level compatible
- SMD package (SOT-23-3L)
- Trench technology
- Fast switching
Zastosowania
Tłumaczenie AI
- High-speed switching
- DC-DC converters
- Li-ion batteries
C2929031 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |