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EDA-ModelleEasyEDA
KIA Semicon Tech KPE4403A
| Hersteller | KIA Semicon TechAsian Brands |
| Herst.-Teilenr. | KPE4403A |
| LCSC-Nr. | C2924929 |
| Verp. | SOP-8 |
| Kundennummer | |
| Hauptmerkm. | MOSFET P-CH 30V 5A SOP-8 |
| Datenblatt | KIA Semicon Tech KPE4403A |
| Alternativteile | 2 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | KIA Semicon Tech | |
| Verp. | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 95pF | |
| Current - Continuous Drain(Id) | 5A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 1.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF | |
| RDS(on) | 45mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 580pF | |
| Gate Charge(Qg) | 6.5nC@4.5V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | KIA Semicon Tech | |
| Verp. | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 95pF | |
| Current - Continuous Drain(Id) | 5A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 1.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF | |
| RDS(on) | 45mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 580pF | |
| Gate Charge(Qg) | 6.5nC@4.5V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
The KPE4403A is the high cell density trenched P-channel MOSFET, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The KNE4403A meet the RoHS and Green product requirement.
Merkmale
KI-Übersetzung
- RDs(on)=40mΩ(typ)@ VGs=10 V
- Green device available
- Super low gate charge
- Excellent Cdv/dt effect decline
- Advanced high cell density trench technology
Vorrätig: 20
20 Ab Lager, sofort versandfertig
Minimum: 5Vielfaches: 5Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 5+ | $ 0.1166 | $ 0.58 |
| 50+ | $ 0.0971 | $ 4.86 |
| 150+ | $ 0.0873 | $ 13.10 |
| 500+ | $ 0.08 | $ 40.00 |
| 2,500+ | $ 0.0717 | $ 179.25 |
| 5,000+ | $ 0.0688 | $ 344.00 |
Standardgehäuse2500/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | KIA Semicon Tech | |
| Verp. | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 95pF | |
| Current - Continuous Drain(Id) | 5A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 1.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF | |
| RDS(on) | 45mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 580pF | |
| Gate Charge(Qg) | 6.5nC@4.5V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | KIA Semicon Tech | |
| Verp. | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 95pF | |
| Current - Continuous Drain(Id) | 5A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 1.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF | |
| RDS(on) | 45mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 580pF | |
| Gate Charge(Qg) | 6.5nC@4.5V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
The KPE4403A is the high cell density trenched P-channel MOSFET, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The KNE4403A meet the RoHS and Green product requirement.
Merkmale
KI-Übersetzung
- RDs(on)=40mΩ(typ)@ VGs=10 V
- Green device available
- Super low gate charge
- Excellent Cdv/dt effect decline
- Advanced high cell density trench technology
C2924929 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |