- Pinbelegung
- Footprint
Abbildung ähnlich
EDA-ModelleEasyEDA
onsemi MJB44H11T4G
| Hersteller | |
| Herst.-Teilenr. | MJB44H11T4G |
| LCSC-Nr. | C233689 |
| Verp. | D2PAK |
| Kundennummer | |
| Hauptmerkm. | TRANS NPN 80V 10A D2PAK |
| Datenblatt | onsemi MJB44H11T4G |
| RoHS-Konformität | 4 Dokumente verfügbar |
| Alternativteile | 2 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | onsemi | |
| Verp. | D2PAK | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 10uA | |
| Transition frequency(fT) | 50MHz | |
| Collector - Emitter Voltage VCEO | 80V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 60 | |
| Current - Collector(Ic) | 10A | |
| Pd - Power Dissipation | 50W | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 1V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | onsemi | |
| Verp. | D2PAK | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 10uA | |
| Transition frequency(fT) | 50MHz | |
| Collector - Emitter Voltage VCEO | 80V |
| Typ | Beschreibung | |
|---|---|---|
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 60 | |
| Current - Collector(Ic) | 10A | |
| Pd - Power Dissipation | 50W | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 1V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
Complementary power transistors are for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.
Merkmale
KI-Übersetzung
- Low Collector−Emitter Saturation Voltage − VCE(sat)=1.0 V (Max) @ 8.0 A
- Fast Switching Speeds
- Complementary Pairs Simplifies Designs
- Epoxy Meets UL 94 V-0 @ 0.125 in
- ESD Ratings: Human Body Model, 3B>8000 V Machine Model, C>400 V
- NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
- Pb−Free Packages are Available
Vorrätig: 1,519
1,519 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.4929 | $ 1.49 |
| 10+ | $ 1.2217 | $ 12.22 |
| 30+ | $ 1.0731 | $ 32.19 |
| 100+ | $ 0.9049 | $ 90.49 |
| 500+ | $ 0.8314 | $ 415.70 |
| 800+ | $ 0.7971 | $ 637.68 |
Standardgehäuse800/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | onsemi | |
| Verp. | D2PAK | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 10uA | |
| Transition frequency(fT) | 50MHz | |
| Collector - Emitter Voltage VCEO | 80V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 60 | |
| Current - Collector(Ic) | 10A | |
| Pd - Power Dissipation | 50W | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 1V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | onsemi | |
| Verp. | D2PAK | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 10uA | |
| Transition frequency(fT) | 50MHz | |
| Collector - Emitter Voltage VCEO | 80V |
| Typ | Beschreibung | |
|---|---|---|
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 60 | |
| Current - Collector(Ic) | 10A | |
| Pd - Power Dissipation | 50W | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 1V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
Complementary power transistors are for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.
Merkmale
KI-Übersetzung
- Low Collector−Emitter Saturation Voltage − VCE(sat)=1.0 V (Max) @ 8.0 A
- Fast Switching Speeds
- Complementary Pairs Simplifies Designs
- Epoxy Meets UL 94 V-0 @ 0.125 in
- ESD Ratings: Human Body Model, 3B>8000 V Machine Model, C>400 V
- NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
- Pb−Free Packages are Available
C233689 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Typ | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| MJB44H11G | onsemi | TO-263-2 | 348 | $ 1.5979 | ||
| NJVMJB44H11T4G | onsemi | D2PAK | 0 | $ 1.7774 |