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Modelli EDAEasyEDA
onsemi NZL6V8AXV3T1G
| Produttore | |
| Cod. Prod. | NZL6V8AXV3T1G |
| Cod. LCSC | C233422 |
| Imballo | SC-89-3 |
| Numero Cliente | |
| Attr. chiave | 11.9VC Clamp 6.7A@8/20us Ipp ESD DIODE SC-89-3 |
| Scheda Tecnica | onsemi NZL6V8AXV3T1G |
| Conformità RoHS | 4 documenti disponibili |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Produttore | onsemi | |
| Imballo | SC-89-3 | |
| Clamping Voltage | 11.9V | |
| Operating Temperature | -55℃~+150℃ | |
| Peak Pulse Current (Ipp) | 6.7A@8/20us | |
| Peak Pulse Power Dissipation (Ppp) | 73W@8/20us | |
| Number of Channels | 2 | |
| Voltage - Breakdown | 7.14V | |
| type | ESD | |
| Reverse Leakage Current (Ir) | 1uA | |
| Polarity | Bidirectional | |
| Reverse Stand-Off Voltage (Vrwm) | 4.5V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Produttore | onsemi | |
| Imballo | SC-89-3 | |
| Clamping Voltage | 11.9V | |
| Operating Temperature | -55℃~+150℃ | |
| Peak Pulse Current (Ipp) | 6.7A@8/20us | |
| Peak Pulse Power Dissipation (Ppp) | 73W@8/20us |
| Tipo | Descrizione | |
|---|---|---|
| Number of Channels | 2 | |
| Voltage - Breakdown | 7.14V | |
| type | ESD | |
| Reverse Leakage Current (Ir) | 1uA | |
| Polarity | Bidirectional | |
| Reverse Stand-Off Voltage (Vrwm) | 4.5V |
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Descrizione
Traduzione AI
These dual monolithic silicon ESD protection diodes are intended for use in voltage− and ESD−sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium.
Caratteristiche
Traduzione AI
- SC−89 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration
- ESD Rating of Class N (exceeding 16 kV) per the Human Body Model
- Meets IEC61000−4−2 Level 4
- Low Leakage <5.0 μA
- These are Pb−Free Devices
Applicazioni
Traduzione AI
- Computer Interface Protection
- Microprocessor Protection
Esaurito
Avvisami
Minimo: 5Multiplo: 5Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 5+ | $ 0.15 | $ 0.75 |
| 50+ | $ 0.1214 | $ 6.07 |
| 150+ | $ 0.1072 | $ 16.08 |
| 500+ | $ 0.0965 | $ 48.25 |
| 3,000+ | $ 0.0879 | $ 263.70 |
| 6,000+ | $ 0.0836 | $ 501.60 |
Package Standard3000/Full Reel | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Produttore | onsemi | |
| Imballo | SC-89-3 | |
| Clamping Voltage | 11.9V | |
| Operating Temperature | -55℃~+150℃ | |
| Peak Pulse Current (Ipp) | 6.7A@8/20us | |
| Peak Pulse Power Dissipation (Ppp) | 73W@8/20us | |
| Number of Channels | 2 | |
| Voltage - Breakdown | 7.14V | |
| type | ESD | |
| Reverse Leakage Current (Ir) | 1uA | |
| Polarity | Bidirectional | |
| Reverse Stand-Off Voltage (Vrwm) | 4.5V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Produttore | onsemi | |
| Imballo | SC-89-3 | |
| Clamping Voltage | 11.9V | |
| Operating Temperature | -55℃~+150℃ | |
| Peak Pulse Current (Ipp) | 6.7A@8/20us | |
| Peak Pulse Power Dissipation (Ppp) | 73W@8/20us |
| Tipo | Descrizione | |
|---|---|---|
| Number of Channels | 2 | |
| Voltage - Breakdown | 7.14V | |
| type | ESD | |
| Reverse Leakage Current (Ir) | 1uA | |
| Polarity | Bidirectional | |
| Reverse Stand-Off Voltage (Vrwm) | 4.5V |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
These dual monolithic silicon ESD protection diodes are intended for use in voltage− and ESD−sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium.
Caratteristiche
Traduzione AI
- SC−89 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration
- ESD Rating of Class N (exceeding 16 kV) per the Human Body Model
- Meets IEC61000−4−2 Level 4
- Low Leakage <5.0 μA
- These are Pb−Free Devices
Applicazioni
Traduzione AI
- Computer Interface Protection
- Microprocessor Protection
C233422 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |