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AGMSEMI AGM30P25AP
| Produttore | AGMSEMIAsian Brands |
| Cod. Prod. | AGM30P25AP |
| Cod. LCSC | C22364310 |
| Imballo | PDFN-8(3.3x3.3) |
| Numero Cliente | |
| Attr. chiave | MOSFET P-CH 30V 10A PDFN-8(3.3x3.3) |
| Scheda Tecnica | AGMSEMI AGM30P25AP |
| Parti alternative | 10 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | AGMSEMI | |
| Imballo | PDFN-8(3.3x3.3) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 102pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 28W | |
| Reverse Transfer Capacitance (Crss@Vds) | 89pF | |
| RDS(on) | 20mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 681pF | |
| Gate Charge(Qg) | 14nC@10V | |
| Type | P-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | AGMSEMI | |
| Imballo | PDFN-8(3.3x3.3) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 102pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 28W | |
| Reverse Transfer Capacitance (Crss@Vds) | 89pF | |
| RDS(on) | 20mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 681pF | |
| Gate Charge(Qg) | 14nC@10V | |
| Type | P-Channel |
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Descrizione
Traduzione AI
AGM30P25AP combines advanced trench MOSFET technology with a low-resistance package to deliver ultra-low RDS(ON). This device is ideal for load switch and battery protection applications.
Caratteristiche
Traduzione AI
- Advanced high cell-density trench technology
- Low RDS(ON) to minimize conduction losses
- Low gate charge for fast switching
- Low thermal resistance
- 100% avalanche tested
- 100% DVDS tested
Applicazioni
Traduzione AI
- Motherboard/GPU core voltage
- Secondary synchronous rectifier for switching power supply
- Point-of-load applications
- Brushless DC motor driver
Esaurito
Avvisami
Minimo: 5Multiplo: 5Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 5+ | $ 0.1197 | $ 0.60 |
| 50+ | $ 0.0963 | $ 4.82 |
| 150+ | $ 0.0846 | $ 12.69 |
| 500+ | $ 0.0758 | $ 37.90 |
| 2,500+ | $ 0.0673 | $ 168.25 |
| 5,000+ | $ 0.0638 | $ 319.00 |
Package Standard5000/Full Reel | ||
Prezzo migliore per quantità maggiore?
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | AGMSEMI | |
| Imballo | PDFN-8(3.3x3.3) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 102pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 28W | |
| Reverse Transfer Capacitance (Crss@Vds) | 89pF | |
| RDS(on) | 20mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 681pF | |
| Gate Charge(Qg) | 14nC@10V | |
| Type | P-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | AGMSEMI | |
| Imballo | PDFN-8(3.3x3.3) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 102pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 28W | |
| Reverse Transfer Capacitance (Crss@Vds) | 89pF | |
| RDS(on) | 20mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 681pF | |
| Gate Charge(Qg) | 14nC@10V | |
| Type | P-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
AGM30P25AP combines advanced trench MOSFET technology with a low-resistance package to deliver ultra-low RDS(ON). This device is ideal for load switch and battery protection applications.
Caratteristiche
Traduzione AI
- Advanced high cell-density trench technology
- Low RDS(ON) to minimize conduction losses
- Low gate charge for fast switching
- Low thermal resistance
- 100% avalanche tested
- 100% DVDS tested
Applicazioni
Traduzione AI
- Motherboard/GPU core voltage
- Secondary synchronous rectifier for switching power supply
- Point-of-load applications
- Brushless DC motor driver
C22364310 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| AGM30P35AP | AGMSEMI | PDFN-8L(3.3x3.3) | 4,870 | $ 0.0986 | ||
| AGM30P16AP | AGMSEMI | PDFN-8(3.3x3.3) | 290 | $0.1602 $0.1686 | ||
| AGM40P65AP | AGMSEMI | PDFN-8(3.3x3.3) | 3,570 | $ 0.1185 | ||
| AGM60P30AP | AGMSEMI | PDFN-8(3.3x3.3) | 4,170 | $ 0.2066 | ||
| AGM85P10AP | AGMSEMI | PDFN-8(3.3x3.3) | 675 | $ 0.2496 | ||
| AGM60P14AP | AGMSEMI | PDFN3.3x3.3-8 | 1,675 | $ 0.3784 | ||
| AGM60P20AP | AGMSEMI | PDFN-8(3.3x3.3) | 80 | $ 0.1757 | ||
| AGM30P20AP | AGMSEMI | PDFN-8(3.3x3.3) | 0 | $ 0.1001 | ||
| AGM40P35AP | AGMSEMI | PDFN3.3x3.3-8 | 0 | $ 0.2721 | ||
| AGM150P10AP | AGMSEMI | PDFN-8(3.3x3.3) | 0 | $ 0.245 |