Wayon WML30N65EM
| Hersteller | WayonAsian Brands |
| Herst.-Teilenr. | WML30N65EM |
| LCSC-Nr. | C21726232 |
| Verp. | TO-220F |
| Kundennummer | |
| Hauptmerkm. | 650V 27A 4V 34W 160mΩ@10V N-Channel TO-220F Single FETs, MOSFETs |
| Datenblatt | Wayon WML30N65EM |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Wayon | |
| Verp. | TO-220F | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 27A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 34W | |
| RDS(on) | 160mΩ@10V | |
| Input Capacitance(Ciss) | 1.91nF | |
| Gate Charge(Qg) | 18nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Wayon | |
| Verp. | TO-220F | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 27A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 34W | |
| RDS(on) | 160mΩ@10V | |
| Input Capacitance(Ciss) | 1.91nF | |
| Gate Charge(Qg) | 18nC@10V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
WMOST™ EM is a third-generation super-junction MOSFET series utilizing charge balance technology, featuring ultra-low on-resistance and low gate charge performance. WMOST™ EM is designed for applications with extremely high demands on power density and efficiency.
Merkmale
KI-Übersetzung
- VDS = 700 V at Tj,max
- Typical RDS(on) = 0.135 Ω
- 100% tested for unclamped inductive switching (UIS)
- Lead-free plating, halogen-free
Anwendungen
KI-Übersetzung
- LED lighting
- Chargers
- Adapters
- Personal computers
- LCD TVs
- Servers
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.6619 | $ 1.66 |
| 10+ | $ 1.4161 | $ 14.16 |
| 50+ | $ 1.262 | $ 63.10 |
| 100+ | $ 1.103 | $ 110.30 |
| 500+ | $ 1.0309 | $ 515.45 |
| 1,000+ | $ 0.9998 | $ 999.80 |
Standardgehäuse50/Full Tube | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Wayon | |
| Verp. | TO-220F | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 27A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 34W | |
| RDS(on) | 160mΩ@10V | |
| Input Capacitance(Ciss) | 1.91nF | |
| Gate Charge(Qg) | 18nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Wayon | |
| Verp. | TO-220F | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 27A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 34W | |
| RDS(on) | 160mΩ@10V | |
| Input Capacitance(Ciss) | 1.91nF | |
| Gate Charge(Qg) | 18nC@10V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
WMOST™ EM is a third-generation super-junction MOSFET series utilizing charge balance technology, featuring ultra-low on-resistance and low gate charge performance. WMOST™ EM is designed for applications with extremely high demands on power density and efficiency.
Merkmale
KI-Übersetzung
- VDS = 700 V at Tj,max
- Typical RDS(on) = 0.135 Ω
- 100% tested for unclamped inductive switching (UIS)
- Lead-free plating, halogen-free
Anwendungen
KI-Übersetzung
- LED lighting
- Chargers
- Adapters
- Personal computers
- LCD TVs
- Servers
C21726232 EasyEDA-Bibliothek
Noch nicht gezeichnet
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

