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EDA-ModelleEasyEDA
NCE NCE4012S
| Hersteller | NCEAsian Brands |
| Herst.-Teilenr. | NCE4012S |
| LCSC-Nr. | C216775 |
| Verp. | SOP-8 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 40V 12A SOP-8 |
| Datenblatt | NCE NCE4012S |
| Alternativteile | 7 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NCE | |
| Verp. | SOP-8 | |
| Output Capacitance(Coss) | 209pF | |
| Pd - Power Dissipation | 3W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF | |
| RDS(on) | 18mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.78nF | |
| Gate Charge(Qg) | 30nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NCE | |
| Verp. | SOP-8 | |
| Output Capacitance(Coss) | 209pF | |
| Pd - Power Dissipation | 3W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 12A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF | |
| RDS(on) | 18mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.78nF | |
| Gate Charge(Qg) | 30nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
NCE4012S utilizes advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications.
Merkmale
KI-Übersetzung
- VDS = 40V, ID = 12A
- RDS(ON) < 12 mΩ at VGS = 10V (typical 8.4 mΩ)
- RDS(ON) < 18 mΩ at VGS = 4.5V (typical 12.3 mΩ)
- High-density cell design for ultra-low on-resistance
- Fully characterized avalanche voltage and current
- Excellent stability and consistency at high EAS
- Thermally efficient package
- Special process technology with high ESD capability
Anwendungen
KI-Übersetzung
- Load switching - Hard switching and high-frequency circuits - Uninterruptible power supplies
Vorrätig: 4,350
4,350 Ab Lager, sofort versandfertig
Minimum: 5Vielfaches: 5Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 5+ | $ 0.2694 | $ 1.35 |
| 50+ | $ 0.2072 | $ 10.36 |
| 150+ | $ 0.1805 | $ 27.08 |
| 500+ | $ 0.1472 | $ 73.60 |
| 2,500+ | $ 0.1324 | $ 331.00 |
| 4,000+ | $ 0.1235 | $ 494.00 |
Standardgehäuse4000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NCE | |
| Verp. | SOP-8 | |
| Output Capacitance(Coss) | 209pF | |
| Pd - Power Dissipation | 3W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF | |
| RDS(on) | 18mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.78nF | |
| Gate Charge(Qg) | 30nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NCE | |
| Verp. | SOP-8 | |
| Output Capacitance(Coss) | 209pF | |
| Pd - Power Dissipation | 3W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 12A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF | |
| RDS(on) | 18mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.78nF | |
| Gate Charge(Qg) | 30nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
NCE4012S utilizes advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications.
Merkmale
KI-Übersetzung
- VDS = 40V, ID = 12A
- RDS(ON) < 12 mΩ at VGS = 10V (typical 8.4 mΩ)
- RDS(ON) < 18 mΩ at VGS = 4.5V (typical 12.3 mΩ)
- High-density cell design for ultra-low on-resistance
- Fully characterized avalanche voltage and current
- Excellent stability and consistency at high EAS
- Thermally efficient package
- Special process technology with high ESD capability
Anwendungen
KI-Übersetzung
- Load switching - Hard switching and high-frequency circuits - Uninterruptible power supplies
C216775 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| NCE6012AS | NCE | SOP-8 | 15,980 | $ 0.4127 | ||
| NCEP092N10AS | NCE | SOP-8 | 2,578 | $ 0.9079 | ||
| NCEP11N10AS | NCE | SOP-8 | 0 | $ 0.4878 | ||
| NCEP6012AS | NCE | SOP-8 | 0 | $ 0.2608 | ||
| NCEP085N10AS | NCE | SOP-8 | 0 | $ 0.5579 | ||
| NCEP082N10AS | NCE | SOP-8 | 0 | $ 0.6073 | ||
| NCE4015S | NCE | SOP-8 | 0 | $ 0.3061 |